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參數(shù)資料
| 型號： | T15V4M08A-70P |
| 廠商： | TM Technology, Inc. |
| 英文描述： | 512K X 8 LOW POWER CMOS STATIC RAM |
| 中文描述： | 為512k × 8低功耗CMOS靜態(tài)RAM |
| 文件頁數(shù)： | 5/11頁 |
| 文件大小： | 74K |
| 代理商： | T15V4M08A-70P |
TE
CH
tm
RECOMMENDED OPERATING CONDITIONS
(Ta = -40
°
C to 85
°
C)
PARAMETER
Preliminary T15V4M08A
Taiwan Memory Technology, Inc. reserves the right
P. 5
to change products or specifications without notice.
Publication Date: MAR. 2001
Revision:0.A
SYM
Vcc
Vss
V
IH
V
IL
MIN
2.7
0.0
0.7Vcc
-0.2
TYP
3.0
0.0
-
-
MAX
3.6
0.0
Vcc+0.3
0.6
UNIT
V
V
V
V
Supply Voltage
Input Voltage
CAPACITANCE
(f = 1 MHz, Ta = 25
°
C,)
PARAMETER
Input Capacitance
Input/ Output Capacitance
SYMBOL
C
IN
C
I/O
CONDITION
V
IN
= 0V
V
IN
=
V
OUT
= 0V
MAX.
8
10
UNIT
pF
pF
Note:
This parameter is guaranteed by device characterization and is not production tested.
AC TEST CONDITIONS
PARAMETER
CONDITIONS
Input Pulse Levels
Input Rise and Fall Times
Input and Output Timing Reference Level
0.6V to 0.7Vcc
3.0 ns
1.4V
C
L
=30pF+1TTL Load(55ns/70ns)
C
L
=100pF+1TTL Load(Load for 100ns)
Output Load
AC TEST LOADS AND WAVEFORM
D Q
Z
0
= 5 0 o h m
50 ohm
30 pF
Vt =1.4V
Fig.A * Including Scope and Jig Capacitance
T T L
C
L
*
Fig.B Output Load Equivalent
R
L
C
L
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