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參數(shù)資料
| 型號： | T15V4M08A-70P |
| 廠商： | TM Technology, Inc. |
| 英文描述： | 512K X 8 LOW POWER CMOS STATIC RAM |
| 中文描述： | 為512k × 8低功耗CMOS靜態(tài)RAM |
| 文件頁數(shù)： | 4/11頁 |
| 文件大小： | 74K |
| 代理商： | T15V4M08A-70P |
TE
CH
tm
OPERATING CHARACTERISTICS
(Vcc = 2.7 to 3.6V, Vss = 0V, Ta = -40
°
C to 85
°
C)
Preliminary T15V4M08A
Taiwan Memory Technology, Inc. reserves the right
P. 4
to change products or specifications without notice.
Publication Date: MAR. 2001
Revision:0.A
-55
-70
-100
PARAMETER SYM.
TEST CONDITIONS
Min
Max
Min
Max
Min
Max
UNIT
Input Leakage
Current
I
LI
Vcc = Max,
V
IN
= Vss to Vcc
CE
= V
IH
or
OE
= V
IH
or
WE
= V
IL
V
OUT
= Vss to Vcc
CE
= V
IL
,
WE
=V
IH,
OE
= V
IH
,
V
IN
= V
IH
or V
IL,
I
OUT
=0mA
Cycle time=1us,
100% duty, I
OUT
=0mA,
CE
≤
0.2V,V
IN
≤
0.2V
or V
IN
≥
Vcc-0.2V
Cycle time=min,
100% duty, I
OUT
=0mA,
CE
= V
IL
,
V
IN
= V
IH
or V
IL
CE
=
V
IH
V
IN
= V
IH
or V
IL
-
1
-
1
-
1
uA
Output Leakage
Current
I
LO
-
1
-
1
-
1
uA
Operating Power
Supply Current
I
CC
-
2
-
2
-
2
mA
I
CC1
-
3
-
3
-
3
mA
Average Operating
Current
I
CC2
-
40
-
35
-
25
mA
Standby Power
Supply Current
(TTL Level)
I
SB
-
0.3
-
0.3
-
0.3
mA
Standby Power
Supply Current
(CMOS Level)
I
SB1
CE
≥
Vcc-0.2V,
V
IN
≤
0.2V or
V
IN
≥
Vcc-0.2V
-
10
-
10
-
10
uA
Output Low Voltage
V
OL
Output High Voltage
V
OH
I
OL
= 2.1mA
I
OH
= -1.0 mA
-
0.4
-
-
0.4
-
-
0.4
-
V
V
2.2
2.2
2.2
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