- 您現(xiàn)在的位置：買賣IC網(wǎng) > PDF目錄365763 > SUM55N03-16P (Vishay Intertechnology,Inc.) N-Channel 30-V (D-S) 175∩ MOSFET PDF資料下載
參數(shù)資料
| 型號(hào)： | SUM55N03-16P |
| 廠商： | Vishay Intertechnology,Inc. |
| 英文描述： | N-Channel 30-V (D-S) 175∩ MOSFET |
| 中文描述： | N溝道30 V的（副）175∩MOSFET的 |
| 文件頁數(shù)： | 2/6頁 |
| 文件大小： | 106K |
| 代理商： | SUM55N03-16P |
SUM55N03-16P
Vishay Siliconix
New Product
www.vishay.com
2
Document Number: 72632
S-40465—Rev. A, 15-Mar-04
SPECIFICATIONS (T
J
=25 C UNLESS OTHERWISE NOTED)
Parameter
Symbol
Test Condition
Min
Typ
Max
Unit
Static
Drain-Source Breakdown Voltage
V
(BR)DSS
V
DS
= 0 V, I
D
= 250 A
30
V
Gate-Threshold Voltage
V
GS(th)
V
DS
= V
GS
, I
D
= 250 A
1
3
Gate-Body Leakage
I
GSS
V
DS
= 0 V, V
GS
=
20 V
100
nA
V
DS
= 30 V, V
GS
= 0 V
1
Zero Gate Voltage Drain Current
I
DSS
V
DS
= 30 V, V
GS
= 0 V, T
J
= 125 C
50
A
V
DS
= 30 V, V
GS
= 0 V, T
J
= 175 C
250
On-State Drain Current
a
I
D(on)
V
DS
5 V, V
GS
= 10 V
50
A
V
GS
= 10 V, I
D
= 15 A
0.0128
0.016
Drain Source On State Resistance
Drain-Source On-State Resistance
a
r
DS(on)
V
GS
= 10 V, I
D
= 15 A, T
J
= 125 C
0.025
V
GS
= 10 V, I
D
= 15 A, T
J
= 175 C
V
GS
= 4.5 V, I
D
=
10 A
0.031
0.019
0.024
Forward Transconductance
a
g
fs
V
DS
= 15 V, I
D
= 20 A
10
S
Dynamic
b
Input Capacitance
C
iss
1150
Output Capacitance
C
oss
V
GS
= 0 V, V
DS
= 25 V, f = 1 MHz
215
pF
Reverse Transfer Capacitance
C
rss
70
Total Gate Charge
b
Q
g
17
26
Gate-Source Charge
b
Q
gs
V
= 15 V,
V
= 10 V, I
= 50 A
DS
GS
5
nC
Gate-Drain Charge
b
Q
gd
D
2.5
Gate Resistance
R
g
2.7
5.5
8.25
Turn-On Delay Time
b
t
d(on)
7
15
Rise Time
b
t
r
V
= 15 V, R
= 0.3
50 A, V
GEN
= 10 V, R
g
= 2.5
20
30
ns
Turn-Off Delay Time
b
t
d(off)
I
D
25
40
Fall Time
b
t
f
12
20
Source-Drain Diode Ratings and Characteristics (T
C
= 25 C)
c
Continuous Current
I
S
55
A
Pulsed Current
I
SM
50
Forward Voltage
a
V
SD
I
F
= 20 A, V
GS
= 0 V
1.0
1.5
V
Reverse Recovery Time
t
rr
25
70
ns
Peak Reverse Recovery Current
I
RM
I
= 40 A, di/dt = 100 A/ s
F
1.2
2.5
A
Reverse Recovery Charge
Q
rr
0.15
0.09
C
Notes
a.
b.
c.
Pulse test; pulse width
Independent of operating temperature.
Guaranteed by design, not subject to production testing.
300 s, duty cycle
2%.
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| SUM60N04-05LT | N-Channel 40-V (D-S) MOSFET with Sensing Diode |
| SUM60N06-15 | N-Channel 60-V (D-S) 175C MOSFET |
| SUM60N08-07C | Current-Sensing Power MOSFETs |
| SUM60N10-17 | N-Channel 100-V (D-S) 175C MOSFET |
| SUM60P05-11LT | P-Channel 55-V (D-S) MOSFET with Sensing Diode |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| SUM55P06-19L | 功能描述:MOSFET 60V 55A 125W RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| SUM55P06-19L_08 | 制造商:VISHAY 制造商全稱:Vishay Siliconix 功能描述:P-Channel 60-V (D-S) 175 °C MOSFET |
| SUM55P06-19L-E3 | 功能描述:MOSFET 60V 55A 125W RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| SUM55P06-19L-T1-E3 | 制造商:Vishay Intertechnologies 功能描述:MOSFET, Transistor Polarity:P Channel, Continuous Drain Current Id:-55A, Drain S |
| SUM60F | 制造商:SSDI 制造商全稱:Solid States Devices, Inc 功能描述:500 mA 6,000 thru 9,000 VOLTS 180 ns FAST RECOVERY RECTIFIER |
發(fā)布緊急采購，3分鐘左右您將得到回復(fù)。