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參數(shù)資料
| 型號(hào)： | SUM55N03-16P |
| 廠商： | Vishay Intertechnology,Inc. |
| 英文描述： | N-Channel 30-V (D-S) 175∩ MOSFET |
| 中文描述： | N溝道30 V的（副）175∩MOSFET的 |
| 文件頁數(shù)： | 1/6頁 |
| 文件大?。?/td> | 106K |
| 代理商： | SUM55N03-16P |
FEATURES
TrenchFET Power MOSFET
175 C Junction Temperature
PWM Optimized
100% R
g
Tested
APPLICATIONS
High-Side Core DC/DC
Desktop
Server
DDR DC/DC Converter
SUM55N03-16P
Vishay Siliconix
New Product
Document Number: 72632
S-40465—Rev. A, 15-Mar-04
www.vishay.com
1
N-Channel 30-V (D-S) 175 C MOSFET
PRODUCT SUMMARY
V
(BR)DSS
(V)
r
DS(on)
( )
0.016 @ V
GS
= 10 V
0.024 @ V
GS
= 4.5 V
I
D
(A)
55
30
45
D
G
S
N-Channel MOSFET
DRAIN connected to TAB
TO-263
S
D
G
Top View
Ordering Information: SUM55N03-16P—E3 (Lead Free)
ABSOLUTE MAXIMUM RATINGS (T
A
= 25 C UNLESS OTHERWISE NOTED)
Parameter
Symbol
Limit
Unit
Drain-Source Voltage
V
DS
30
Gate-Source Voltage
V
GS
20
V
Continuous Drain Current
(T
J
= 175 C)
T
C
= 25 C
T
C
= 100 C
I
D
55
39
A
Pulsed Drain Current
I
DM
I
AR
E
AR
50
Avalanche Current
Repetitive Avalanche Energy
a
25
L = 0.1 mH
31.25
93
b
mJ
Maximum Power Dissipation
a
T
C
= 25 C
T
A
= 25 C
d
P
D
W
3.75
Operating Junction and Storage Temperature Range
T
J
, T
stg
55 to 175
C
THERMAL RESISTANCE RATINGS
Parameter
Symbol
Limit
Unit
Junction-to-Ambient
PCB Mount
c
R
thJA
40
C/W
Junction-to-Case
R
thJC
1.6
Notes
a.
b.
c.
Duty cycle
See SOA curve for voltage derating.
When mounted on 1” square PCB (FR-4 material).
1%.
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| SUM55P06-19L | 功能描述:MOSFET 60V 55A 125W RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| SUM55P06-19L_08 | 制造商:VISHAY 制造商全稱:Vishay Siliconix 功能描述:P-Channel 60-V (D-S) 175 °C MOSFET |
| SUM55P06-19L-E3 | 功能描述:MOSFET 60V 55A 125W RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| SUM55P06-19L-T1-E3 | 制造商:Vishay Intertechnologies 功能描述:MOSFET, Transistor Polarity:P Channel, Continuous Drain Current Id:-55A, Drain S |
| SUM60F | 制造商:SSDI 制造商全稱:Solid States Devices, Inc 功能描述:500 mA 6,000 thru 9,000 VOLTS 180 ns FAST RECOVERY RECTIFIER |
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