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參數(shù)資料
| 型號： | SUD25N15-52 |
| 廠商： | Vishay Intertechnology,Inc. |
| 英文描述： | N-Channel 150-V (D-S) 175C MOSFET |
| 中文描述： | N溝道150 -五（副）175C MOSFET的 |
| 文件頁數(shù)： | 2/4頁 |
| 文件大小： | 60K |
| 代理商： | SUD25N15-52 |
SUD25N15-52
Vishay Siliconix
www.vishay.com
2
Document Number: 71768
S-40272—Rev. C, 23-Feb-04
SPECIFICATIONS (T
J
= 25 C UNLESS OTHERWISE NOTED)
Parameter
Symbol
Test Condition
Min
Typ
a
Max
Unit
Static
Drain-Source Breakdown Voltage
V
(BR)DSS
V
GS
= 0 V, I
D
= 250 A
150
V
Gate Threshold Voltage
V
GS(th)
V
DS
= V
GS
, I
D
= 250 A
2
4
Gate-Body Leakage
I
GSS
V
DS
= 0 V, V
GS
=
20 V
100
nA
V
DS
= 150 V, V
GS
= 0 V
1
Zero Gate Voltage Drain Current
I
DSS
V
DS
= 150 V, V
GS
= 0 V, T
J
= 125 C
50
A
V
DS
= 150 V, V
GS
= 0 V, T
J
= 175 C
250
On-State Drain Current
b
I
D(on)
V
DS
= 5 V, V
GS
= 10 V
50
A
V
GS
= 10 V, I
D
= 5 A
0.042
0.052
Drain Source On State Resistance
Drain-Source On-State Resistance
b
r
DS(on)
V
GS
= 10 V, I
D
= 5 A, T
J
= 125 C
0.109
V
GS
= 10 V, I
D
= 5 A, T
J
= 175 C
0.145
V
GS
= 6 V, I
D
= 5 A
0.047
0.060
Forward Transconductance
b
g
fs
V
DS
= 15 V, I
D
= 25 A
40
S
Dynamic
a
Input Capacitance
C
iss
1725
Output Capacitance
C
oss
V
GS
= 0 V, V
DS
= 25 V, F = 1 MHz
216
pF
Reverse Transfer Capacitance
C
rss
100
Total Gate Charge
c
Q
g
33
40
Gate-Source Charge
c
Q
gs
V
= 75 V,
V
= 10 V, I
= 25 A
DS
GS
9
nC
Gate-Drain Charge
c
Q
gd
D
12
Gate Resistance
R
g
1
3
Turn-On Delay Time
c
t
d(on)
15
25
Rise Time
c
t
r
V
= 50 V, R
= 3
25 A, V
GEN
= 10 V, R
g
= 2.5
70
100
ns
Turn-Off Delay Time
c
t
d(off)
I
D
25
40
Fall Time
c
t
f
60
40
Source-Drain Diode Ratings and Characteristic (T
C
= 25 C)
Pulsed Current
I
SM
50
A
Diode Forward Voltage
b
V
SD
I
F
= 25 A, V
GS
= 0 V
0.9
1.5
V
Source-Drain Reverse Recovery Time
t
rr
I
F
= 25 A, di/dt = 100 A/ s
95
140
ns
Notes
a.
b.
c.
Guaranteed by design, not subject to production testing.
Pulse test; pulse width
300 s, duty cycle
2%.
Independent of operating temperature.
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相關代理商/技術參數(shù) |
參數(shù)描述 |
|---|---|
| SUD25N15-52_06 | 制造商:VISHAY 制造商全稱:Vishay Siliconix 功能描述:N-Channel 150-V (D-S) 175Celsius MOSFET |
| SUD25N15-52-E3 | 功能描述:MOSFET 150V 25A 136W 52mohm @ 10V RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| SUD25N15-52-E3 | 制造商:Vishay Siliconix 功能描述:MOSFET |
| SUD25N15-52-E3/BKN | 制造商:Vishay Siliconix 功能描述:N-Channel 150-V (D-S) 175C DEG MOSFET |
| SUD25N15-52-T4-E3 | 功能描述:MOSFET N-CH D-S 150V TO252 RoHS:是 類別:分離式半導體產品 >> FET - 單 系列:TrenchFET® 標準包裝:1,000 系列:MESH OVERLAY™ FET 型:MOSFET N 通道，金屬氧化物 FET 特點:邏輯電平門 漏極至源極電壓(Vdss):200V 電流 - 連續(xù)漏極(Id) @ 25° C:18A 開態(tài)Rds（最大）@ Id, Vgs @ 25° C:180 毫歐 @ 9A，10V Id 時的 Vgs(th)（最大）:4V @ 250µA 閘電荷(Qg) @ Vgs:72nC @ 10V 輸入電容 (Ciss) @ Vds:1560pF @ 25V 功率 - 最大:40W 安裝類型:通孔 封裝/外殼:TO-220-3 整包 供應商設備封裝:TO-220FP 包裝:管件 |
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