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參數(shù)資料
| 型號(hào)： | SUD19N20-90 |
| 廠商： | Vishay Intertechnology,Inc. |
| 英文描述： | N-Channel 200-V (D-S) 175 °C MOSFET |
| 中文描述： | N溝道200V（D-S）175℃ MOSFET |
| 文件頁數(shù)： | 2/4頁 |
| 文件大小： | 43K |
| 代理商： | SUD19N20-90 |
SUD19N20-90
Vishay Siliconix
New Product
www.vishay.com
2
Document Number: 71767
S-05233
—
Rev. A, 17-Dec-01
Parameter
Symbol
Test Condition
Min
Typ
a
Max
Unit
Static
Drain-Source Breakdown Voltage
V
(BR)DSS
V
GS
= 0 V, I
D
= 250 A
200
Gate Threshold Voltage
V
GS(th)
V
DS
= V
GS
, I
D
= 250 A
2
V
Gate-Body Leakage
I
GSS
V
DS
= 0 V, V
GS
=
20 V
100
nA
V
DS
= 160 V, V
GS
= 0 V
1
Zero Gate Voltage Drain Current
I
DSS
V
DS
= 160 V, V
GS
= 0 V, T
J
= 125 C
50
A
V
DS
= 160 V, V
GS
= 0 V, T
J
= 175 C
250
On-State Drain Current
b
I
D(on)
V
DS
= 5 V, V
GS
= 10 V
40
A
V
GS
= 10 V, I
D
= 5 A
0.075
0.090
V
GS
= 10 V, I
D
= 5 A, T
J
= 125 C
0.190
Drain-Source On-State Resistance
b
r
DS(on)
V
GS
= 10 V, I
D
= 5 A, T
J
= 175 C
0.260
V
GS
= 6 V, I
D
= 5 A
0.082
0.105
Forward Transconductance
b
g
fs
V
DS
= 15 V, I
D
= 19 A
35
S
Dynamic
a
Input Capacitance
C
iss
1800
Output Capacitance
C
oss
V
GS
= 0 V, V
DS
= 25 V, F = 1 MHz
180
pF
Reverse Transfer Capacitance
C
rss
80
Total Gate Charge
c
Q
g
34
42
Gate-Source Charge
c
Q
gs
V
= 100 V,
V
= 10 V, I
= 19 A
DS
GS
8
nC
Gate-Drain Charge
c
Q
gd
D
12
Turn-On Delay Time
c
t
d(on)
15
25
Rise Time
c
t
r
V
= 100 V, R
= 5.2
19 A, V
GEN
= 10 V, R
G
= 2.5
50
75
Turn-Off Delay Time
c
t
d(off)
I
D
30
45
ns
Fall Time
c
t
f
60
90
Source-Drain Diode Ratings and Characteristic (T
C
= 25 C)
Pulsed Current
I
SM
50
A
Diode Forward Voltage
b
V
SD
I
F
= 19 A, V
GS
= 0 V
0.9
1.5
V
Source-Drain Reverse Recovery Time
t
rr
I
F
= 19 A, di/dt = 100 A/ s
180
250
ns
Notes
a.
b.
c.
Guaranteed by design, not subject to production testing.
Pulse test; pulse width
300 s, duty cycle
2%.
Independent of operating temperature.
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| SUD19N20-90_08 | 制造商:VISHAY 制造商全稱:Vishay Siliconix 功能描述:N-Channel 200-V (D-S) 175 °C MOSFET |
| SUD19N20-90-E3 | 功能描述:MOSFET 200V 17.5A 100W RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| SUD19N20-90-E3 | 制造商:Vishay Siliconix 功能描述:MOSFET |
| SUD19N20-90T1-E3 | 制造商:Vishay Siliconix 功能描述:TRANS MOSFET N-CH 200V 19A 3PIN TO-252 - Tape and Reel |
| SUD19N20-90-T4 | 制造商:Vishay Angstrohm 功能描述:Trans MOSFET N-CH 200V 19A 3-Pin(2+Tab) DPAK T/R |
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