參數(shù)資料
型號: SUD50N03-10AP
廠商: Vishay Intertechnology,Inc.
英文描述: N-Channel 30-V (D-S), 175C, MOSFET PWM Optimized
中文描述: N溝道30 V的(副),175葷,MOSFET的脈寬調(diào)制優(yōu)化
文件頁數(shù): 1/4頁
文件大小: 80K
代理商: SUD50N03-10AP
SUD50N03-10AP
Vishay Siliconix
New Product
Document Number: 71134
S-99628—Rev. A, 10-Jan-00
www.vishay.com FaxBack 408-970-5600
2-1
N-Channel 30-V (D-S), 175 C, MOSFET PWM Optimized
V
(BR)DSS
(V)
r
DS(on)
( )
I
D
(A)
a
30
0.010 @ V
GS
= 10 V
20
0.014 @ V
GS
= 4.5 V
18
D
G
S
N-Channel MOSFET
TO-252
S
G
D
Top View
Drain Connected to Tab
Order Number:
SUD50N03-10AP
Parameter
Symbol
Limit
Unit
Drain-Source Voltage
V
DS
30
V
Gate-Source Voltage
V
GS
20
Continuous Drain Current
(T
J
= 175 C)
a
T
A
= 25 C
I
D
20
A
T
A
= 100 C
14
Pulsed Drain Current
I
DM
100
Continuous Source Current (Diode Conduction)
a
I
S
20
Maximum Power Dissipation
T
C
= 25 C
P
D
71
b
W
T
A
= 25 C
8.3
a
Operating Junction and Storage Temperature Range
T
J
, T
stg
–55 to 175
C
Parameter
Symbol
Typical
Maximum
Unit
MaximumJunction-to-Ambient
Maximum Junction-to-Ambient
a
t
10 sec
R
thJA
15
18
C/W
Steady State
40
50
Maximum Junction-to-Case
Steady State
R
thJC
1.75
2.1
Notes:
a.
b.
Surface mounted on 1” x 1” FR4 Board, t
See SOA curve for voltage derating.
10 sec.
相關(guān)PDF資料
PDF描述
SUD50N03-10CP N-Channel 30-V (D-S), 175 Degrees Celcious, MOSFET PWM Optimized
SUD50P04-09L P-Channel, Tj = 175 °C power MOSFET; low leakage current;
SUD50P04-13L P-Channel 40-V (D-S), 175C MOSFET
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