參數(shù)資料
型號: SUB85N08-08
廠商: Vishay Intertechnology,Inc.
英文描述: N-Channel 75-V (D-S) 175 Degree Celcious MOSFET
中文描述: N通道75 - V(下副秘書長)175度Celcious MOSFET的
文件頁數(shù): 4/5頁
文件大?。?/td> 63K
代理商: SUB85N08-08
SUP/SUB85N08-08
Vishay Siliconix
New Product
www.vishay.com
2-4
Document Number: 71165
S-01884—Rev. B, 28-Aug-00
Drain Source Breakdown vs.
Junction Temperature
Avalanche Current vs. Time
0
0.5
1.0
1.5
2.0
2.5
–50
–25
0
25
50
75
100
125
150
175
On-Resistance vs. Junction Temperature
Source-Drain Diode Forward Voltage
T
J
– Junction Temperature ( C)
V
SD
– Source-to-Drain Voltage (V)
I
S
100
10
1
0.3
0.6
0.9
1.2
V
GS
= 10 V
I
D
T
J
= 25 C
T
J
= 150 C
(
r
D
)
0
70
75
80
85
90
95
–50
–25
0
25
50
75
100
125
150
175
T
J
– Junction Temperature ( C)
t
in
(Sec)
1000
10
0.00001
0.001
0.1
1
0.1
(
I
D
0.01
I
AV
(A) @ T
A
= 150 C
(
V
(
I
D
= 250 A
100
1
0.0001
I
AV
(A) @ T
A
= 25 C
相關PDF資料
PDF描述
SUD06N10-225L N-Channel 100-V (D-S) 175C MOSFET
SUD15N06 N-Channel 60-V (D-S), 175C MOSFET, Logic Level
SUD15P01-52 Low Current Operation at 250 ,Low Reverse Leakage,Low Noise Zener Diode
SUD15N06-90L N-Channel 60-V (D-S), 175C MOSFET; Logic Level;
SUD17N25-165 N-Channel 250-V (D-S) 175C MOSFET
相關代理商/技術參數(shù)
參數(shù)描述
SUB85N08-08-E3 功能描述:MOSFET 75V 85A 250W RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS(導通):0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
SUB85N10 10E3 制造商: 功能描述: 制造商:undefined 功能描述:
SUB85N10-10 功能描述:MOSFET 100V 85A 250W RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS(導通):0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
SUB85N10-10-E3 功能描述:MOSFET 100V 85A 250W RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS(導通):0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
SUB85N10-10T4 制造商:Vishay Siliconix 功能描述:TRANS MOSFET N-CH 100V 85A 3PIN TO-263 - Rail/Tube