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參數(shù)資料
| 型號： | SUB85N08-08 |
| 廠商： | Vishay Intertechnology,Inc. |
| 英文描述： | N-Channel 75-V (D-S) 175 Degree Celcious MOSFET |
| 中文描述： | N通道75 - V（下副秘書長）175度Celcious MOSFET的 |
| 文件頁數(shù)： | 2/5頁 |
| 文件大?。?/td> | 63K |
| 代理商： | SUB85N08-08 |
SUP/SUB85N08-08
Vishay Siliconix
New Product
www.vishay.com
2-2
Document Number: 71165
S-01884—Rev. B, 28-Aug-00
Parameter
Symbol
Test Condition
Min
Typ
Max
Unit
Static
Drain-Source Breakdown Voltage
V
(BR)DSS
V
DS
= 0 V, I
D
= 250 A
75
V
Gate-Threshold Voltage
V
GS(th)
V
DS
= V
GS
, I
D
= 250 A
2.5
Gate-Body Leakage
I
GSS
V
DS
= 0 V, V
GS
=
20 V
100
nA
Zero Gate Voltage Drain Current
V l
D i C
I
DSS
V
DS
= 60 V, V
GS
= 0 V
1
A
V
DS
= 60 V, V
GS
= 0 V, T
J
= 125 C
50
V
DS
= 60 V, V
GS
= 0 V, T
J
= 175 C
250
On-State Drain Current
a
I
D(on)
V
DS
5 V, V
GS
= 10 V
120
A
D i S
Drain-Source On-State Resistance
O S
a
V
GS
= 10 V, I
D
= 30 A
0.0063
0.008
r
DS(on)
V
GS
= 10 V, I
D
= 30 A, T
J
= 125 C
0.014
V
GS
= 10 V, I
D
= 30 A, T
J
= 175 C
0.018
Forward Transconductance
a
g
fs
V
DS
= 15 V, I
D
= 30 A
30
S
Dynamic
b
Input Capacitance
C
iss
5800
Output Capacitance
C
oss
V
GS
= 0 V, V
DS
= 25 V, f = 1 MHz
900
pF
Reverse Transfer Capacitance
C
rss
285
Total Gate Charge
c
Q
g
V
DS
= 35 V V
V
GS
= 10 V, I
D
= 85 A
10 V I
100
150
Gate-Source Charge
c
Q
gs
35
nC
Gate-Drain Charge
c
Q
gd
25
Turn-On Delay Time
c
t
d(on)
V
= 35 ,
= 0 4
85 A V
85 A, V
GEN
= 10 V, R
G
= 2.5
20
30
Rise Time
c
t
r
I
D
10 V R
2 5
115
175
ns
Turn-Off Delay Time
c
t
d(off)
50
75
Fall Time
c
t
f
80
120
Source-Drain Diode Ratings and Characteristics (T
C
= 25 C)
b
Continuous Current
I
S
85
A
Pulsed Current
I
SM
240
Forward Voltage
a
V
SD
I
F
= 85 A, V
GS
= 0 V
1.0
1.5
V
Reverse Recovery Time
t
rr
I
F
= 85 A, di/dt = 100 A/ s
A di/d
70
120
ns
Peak Reverse Recovery Current
I
RM(REC)
4
7
A
Reverse Recovery Charge
Q
rr
0.14
0.30
C
Notes
a.
b.
c.
Pulse test; pulse width
Guaranteed by design, not subject to production testing.
Independent of operating temperature.
300 s, duty cycle
2%.
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