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參數(shù)資料
| 型號： | SUB85N02-03 |
| 廠商： | Vishay Intertechnology,Inc. |
| 英文描述： | N-Channel 20-V (D-S) 175 Degree Celcious MOSFET |
| 中文描述： | N溝道20 - V（下副秘書長）175度Celcious MOSFET的 |
| 文件頁數(shù)： | 2/5頁 |
| 文件大?。?/td> | 66K |
| 代理商： | SUB85N02-03 |
SUP/SUB85N02-03
Vishay Siliconix
www.vishay.com
2
Document Number: 71421
S-32619—Rev. B, 29-Dec-03
MOSFET SPECIFICATIONS (T
J
=25 C UNLESS OTHERWISE NOTED)
Parameter
Symbol
Test Condition
Min
Typ
Max
Unit
Static
Drain-Source Breakdown Voltage
V
(BR)DSS
V
GS
= 0 V, I
D
= 2 mA
20
V
Gate Threshold Voltage
V
GS(th)
V
DS
= V
GS
, I
DS
= 2 mA
0.45
Gate-Body Leakage
I
GSS
V
DS
= 0 V, V
GS
=
8 V
100
nA
Zero Gate Voltage Drain Current
I
DSS
V
DS
= 20 V, V
GS
= 0 V
1
A
V
DS
= 20 V, V
GS
= 0 V, T
J
= 125 C
250
On-State Drain Current
a
I
D(on)
V
DS
= 5 V, V
GS
= 4.5 V
120
A
V
GS
= 4.5 V, I
D
= 30 A
0.0025
0.003
V
GS
= 4.5 V, I
D
= 30 A, T
J
= 125 C
0.0042
Drain-Source On-State Resistance
a
r
DS(on)
V
GS
= 4.5 V, I
D
= 30 A, T
J
= 175 C
0.005
V
GS
= 2.5 V, I
D
= 30 A
0.0027
0.0034
V
GS
= 1.8 V, I
D
= 30 A
0.003
0.0038
Forward Transconductance
a
g
fs
V
DS
= 5 V, I
D
= 30 A
30
S
Dynamic
b
Input Capacitance
C
iss
21250
Output Capacitance
C
oss
V
GS
= 0 V, V
DS
= 20 V, f = 1 MHz
2350
pF
Reversen Transfer Capacitance
C
rss
1520
Total Gate Charge
c
Q
g
140
200
Gate-Source Charge
c
Q
gs
V
= 10 V,
V
= 4.5 V, I
= 85 A
DS
GS
18
nC
Gate-Drain Charge
c
Q
gd
D
24
Turn-On Delay Time
c
t
d(on)
20
30
Rise Time
c
t
r
= 10 V, R
= 0.12
V
DD
10 V, R
L
0.12
85 A, V
GEN
= 4.5 V, R
= 2.5
200
300
ns
Turn-Off Delay Time
c
t
d(off)
I
D
450
670
Fall Time
c
t
f
g
320
480
Source-Drain Diode Ratings and Characteristics (T
C
= 25 C)
b
Pulsed Current
I
SM
240
A
Forward Voltage
a
V
SD
I
F
= 100 A, V
GS
= 0 V
1.2
1.5
V
Reverse Recovery Time
t
rr
I
F
= 50 A, di/dt = 100 A/ s
75
150
ns
Notes:
a.
b.
c.
Pulse test; pulse width
Guaranteed by design, not subject to production testing.
Independent of operating temperature.
300 s, duty cycle
2%.
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