參數(shù)資料
型號(hào)： SUP85N02-03
廠商： Vishay Intertechnology,Inc.
英文描述： N-Channel 20-V (D-S) 175 Degree Celcious MOSFET
中文描述： N溝道20 - V（下副秘書長）175度Celcious MOSFET的
文件頁數(shù)： 1/5頁
文件大小： 66K
代理商： SUP85N02-03
SUP/SUB85N02-03
Vishay Siliconix
Document Number: 71421
S-32619—Rev. B, 29-Dec-03
www.vishay.com
1
N-Channel 20-V (D-S) 175 C MOSFET
PRODUCT SUMMARY
V
(BR)DSS
(V)
r
DS(on)
( )
I
D
(A)
a
0.003 @ V
GS
= 4.5 V
85
20
0.0034 @ V
GS
= 2.5 V
85
0.0038 @ V
GS
= 1.8 V
85
D
G
S
N-Channel MOSFET
TO-220AB
Top View
G D S
TO-263
S
G
Top View
DRAIN connected to TAB
D
Ordering Information:
SUP85N02-03—E3 (Lead Free)
Ordering Information:
SUB85N02-03—E3 (Lead Free)
ABSOLUTE MAXIMUM RATINGS (T
C
= 25 C UNLESS OTHERWISE NOTED)
Parameter
Symbol
Limit
Unit
Drain-Source Voltage
V
DS
20
V
Gate-Source Voltage
V
GS
8
Continuous Drain Current
(T
J
= 175 C)
a
T
C
= 25 C
I
D
85
T
C
= 100 C
85
A
Pulsed Drain Current
I
DM
240
Avalanche Current
I
AR
30
Repetitive Avalanche Energy
b
L = 0.1 mH
E
AR
45
mJ
Power Dissipation
a
T
C
= 25 C
P
D
250
W
Operating Junction and Storage Temperature Range
T
J
, T
stg
55 to 175
C
THERMAL RESISTANCE RATINGS
Parameter
Symbol
Limit
Unit
Junction-to-Ambient
t A bi
PCB Mount (TO-263)
c
R
thJA
40
Free Air (TO-220AB)
62.5
C/W
Junction-to-Case
R
thJC
0.6
Notes:
a.
b.
c.
See SOA curve for voltage derating.
Duty cycle
1%.
When mounted on 1” square PCB (FR-4 material).
相關(guān)PDF資料
PDF描述
SUP85N02-03-E3 N-Channel 20-V (D-S) 175 Degree Celcious MOSFET
SUB85N03-07P N-Channel 30-V (D-S) 175C MOSFET
SUB85N06-05 N-Channel 60-V (D-S) 175C MOSFET
SUP85N04-03 TRANSISTOR | MOSFET | N-CHANNEL | 40V V(BR)DSS | 85A I(D) | TO-220AB
SUB85N04-03 Low Current Operation at 250 ，Low Reverse Leakage,Low Noise Zener Diode
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
SUP85N02-03-E3 功能描述:MOSFET 20V 85A 250W RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
SUP85N02-06 功能描述:MOSFET 20V 85A 120W RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
SUP85N02-06-E3 功能描述:MOSFET 20V 85A 120W RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
SUP85N03-04P 功能描述:MOSFET 30V 85A 166W RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
SUP85N03-04P-E3 功能描述:MOSFET 30V 85A 166W RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
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