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參數(shù)資料
| 型號： | STW12NA60 |
| 廠商： | 意法半導(dǎo)體 |
| 英文描述： | N-Channel Enhancement Mode Fast Power MOS Transistor(N溝道增強模式快速功率MOSFET) |
| 中文描述： | N溝道增強模式快速功率MOS晶體管（不適用溝道增強模式快速功率MOSFET的） |
| 文件頁數(shù)： | 1/11頁 |
| 文件大小： | 242K |
| 代理商： | STW12NA60 |
STH12NA60/FI
STW12NA60
N - CHANNEL ENHANCEMENT MODE
FAST POWER MOS TRANSISTOR
I
TYPICAL R
DS(on)
= 0.44
I
±
30V GATE TO SOURCE VOLTAGE RATING
I
100% AVALANCHE TESTED
I
REPETITIVE AVALANCHE DATA AT 100
o
C
I
LOW INTRINSIC CAPACITANCES
I
GATE GHARGE MINIMIZED
I
REDUCED THRESHOLD VOLTAGE SPREAD
DESCRIPTION
This series of POWER MOSFETS represents the
most advanced high voltage technology. The op-
timized cell layout coupled with a new proprietary
edge termination concur to give the device low
R
DS(on)
and gate charge, unequalled ruggedness
and superior switching performance.
APPLICATIONS
I
HIGH CURRENT, HIGH SPEED SWITCHING
I
SWITCH MODE POWERSUPPLIES (SMPS)
I
DC-AC CONVERTERS FOR WELDING
EQUIPMENT AND UNINTERRUPTIBLE
POWER SUPPLIES AND MOTOR DRIVE
INTERNAL SCHEMATIC DIAGRAM
TYPE
V
DSS
R
DS(on)
< 0.6
< 0.6
< 0.6
I
D
STH12NA60
STH12NA60FI
STW12NA60
600 V
600 V
600 V
12 A
7 A
12 A
November 1996
ABSOLUTE MAXIMUM RATINGS
Symbol
Parameter
Value
Unit
STH/STW12NA60
STH12NA60FI
V
DS
Drain-source Voltage (V
GS
= 0)
Drain- gate Voltage (R
GS
= 20 k
)
Gate-source Voltage
Drain Current (continuous) at T
c
= 25
o
C
Drain Current (continuous) at T
c
= 100
o
C
600
V
V
DGR
600
V
V
GS
±
30
V
I
D
12
7
A
I
D
7.6
4.4
A
I
DM
(
)
P
tot
Drain Current (pulsed)
Total Dissipation at T
c
= 25
o
C
48
48
A
190
80
W
Derating Factor
1.52
0.64
W/
o
C
V
ISO
Insulation Withstand Voltage (DC)
4000
V
o
C
o
C
T
stg
Storage Temperature
-65 to 150
T
j
Max. Operating Junction Temperature
(
) Pulsewidth limited by safe operating area
150
1
2
3
TO-218
ISOWATT218
1
2
3
1
2
3
TO-247
1/11
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| STW16NA60 | N-Channel Enhancement Mode Fast Power MOS Transistor(N溝道增強模式快速功率MOS晶體管) |
| STW16NK60Z | N-CHANNEL 600V - 0.38з - 14A TO-220 / I2SPAK / TO-247 Zener-Protected SuperMESH⑩ MOSFET |
| STP16NK60Z | N-CHANNEL 600V - 0.38з - 14A TO-220 / I2SPAK / TO-247 Zener-Protected SuperMESH⑩ MOSFET |
| STB16NK60Z-S | N-CHANNEL 600V - 0.38з - 14A TO-220 / I2SPAK / TO-247 Zener-Protected SuperMESH⑩ MOSFET |
| STP16NK60Z-S | N-CHANNEL 600V - 0.38з - 14A TO-220 / I2SPAK / TO-247 Zener-Protected SuperMESH⑩ MOSFET |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| STW12NB60 | 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:N-CHANNEL 600V - 0.5ohm - 12A TO-247 PowerMesh⑩II MOSFET |
| STW12NC60 | 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:N-CHANNEL 600V - 0.48ohm - 12A TO-247 PowerMeshII MOSFET |
| STW12NK60Z | 功能描述:MOSFET N-channel 650 V 0.53 ohm 10A RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| STW12NK80Z | 功能描述:MOSFET N-Ch 800 Volt 10.5 A Zener SuperMESH RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| STW12NK80Z | 制造商:STMicroelectronics 功能描述:MOSFET N TO-247 |
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