參數(shù)資料
型號(hào): STW11NM80
廠商: 意法半導(dǎo)體
英文描述: N-CHANNEL 800V - 0.35ohm - 11A TO-220/FP/D2PAK/TO-247 MDmesh?Power MOSFET
中文描述: N溝道800V的- 0.35ohm - 11A條TO-220/FP/D2PAK/TO-247的MDmesh?功率MOSFET
文件頁數(shù): 2/14頁
文件大小: 582K
代理商: STW11NM80
STP11NM80 - STF11NM80 - STB11NM80 - STW11NM80
2/14
Table 3: Absolute Maximum ratings
Symbol
(
) Pulse width limited by safe operating area
(*) Limited only by the Maximum Temperature Allowed
Table 4: Thermal Data
Table 5: Avalanche Characteristics
Symbol
I
AR
Avalanche Current, Repetitive or Not-Repetitive
(pulse width limited by T
j
max)
E
AS
Single Pulse Avalanche Energy
(starting T
j
= 25 °C, I
D
= 2.5A, V
DD
= 50 V)
Parameter
Value
Unit
TO-220/D
2
PAK
TO-247
TO-220FP
V
DS
V
DGR
V
GS
I
D
I
D
I
DM
( )
P
TOT
Drain-source Voltage (V
GS
= 0)
Drain-gate Voltage (R
GS
= 20 k
)
800
V
800
V
Gate- source Voltage
± 30
V
Drain Current (continuous) at T
C
= 25°C
Drain Current (continuous) at T
C
= 100°C
11
11 (*)
A
4.7
4.7 (*)
A
Drain Current (pulsed)
44
44 (*)
A
Total Dissipation at T
C
= 25°C
Derating Factor
Operating Junction Temperature
Storage Temperature
150
35
W
1.2
0.28
W /°C
T
j
T
stg
-65 to 150
°C
TO-220/D
2
PAK
TO-247
0.83
TO-220FP
Unit
Rthj-case
Rthj-amb
T
l
Thermal Resistance Junction-case Max
Thermal Resistance Junction-ambient Max
Maximum Lead Temperature For Soldering
Purpose
3.6
°C/W
°C/W
62.5
300
°C
Parameter
Max Value
2.5
Unit
A
400
mJ
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