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參數(shù)資料
| 型號： | STW11NM80 |
| 廠商： | 意法半導(dǎo)體 |
| 英文描述： | N-CHANNEL 800V - 0.35ohm - 11A TO-220/FP/D2PAK/TO-247 MDmesh?Power MOSFET |
| 中文描述： | N溝道800V的- 0.35ohm - 11A條TO-220/FP/D2PAK/TO-247的MDmesh？功率MOSFET |
| 文件頁數(shù)： | 14/14頁 |
| 文件大?。?/td> | 582K |
| 代理商： | STW11NM80 |
STP11NM80 - STF11NM80 - STB11NM80 - STW11NM80
14/14
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PDF描述 |
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| STW11NB80 | CONNECTOR ACCESSORY |
| STF21NM50N | N-CHANNEL 500V - 0.15ohm - 18A TO-220/FP/D2/I2PAK/TO-247 SECOND GENERATION MDmesh MOSFET |
| STB21NM50N | N-CHANNEL 500V - 0.15ohm - 18A TO-220/FP/D2/I2PAK/TO-247 SECOND GENERATION MDmesh MOSFET |
| STP21NM50N | N-CHANNEL 500V - 0.15ohm - 18A TO-220/FP/D2/I2PAK/TO-247 SECOND GENERATION MDmesh MOSFET |
| STW21NM50N | N-CHANNEL 500V - 0.15ohm - 18A TO-220/FP/D2/I2PAK/TO-247 SECOND GENERATION MDmesh MOSFET |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| STW120NF10 | 功能描述:MOSFET POWER MOSFET RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| STW12N120K5 | 制造商:STMicroelectronics 功能描述:POWER MOSFET IN TO-3PF, H2PAK-2, TO-220 AND TO-247 PACKAGES - Tape and Reel |
| STW12N150K5 | 功能描述:MOSFET N-CH 1500V 7A TO-247 制造商:stmicroelectronics 系列:MDmesh? K5 包裝:管件 零件狀態(tài):有效 FET 類型:MOSFET N 通道，金屬氧化物 FET 功能:標準 漏源極電壓（Vdss）:1500V（1.5kV） 電流 - 連續(xù)漏極（Id）（25°C 時）:7A（Tc） 不同?Id，Vgs 時的?Rds On（最大值）:1.9 歐姆 @ 3.5A，10V 不同 Id 時的 Vgs（th）（最大值）:5V @ 100μA 不同 Vgs 時的柵極電荷（Qg）:47nC @ 10V 不同 Vds 時的輸入電容（Ciss）:1360pF @ 100V 功率 - 最大值:250W 工作溫度:-55°C ~ 150°C（TJ） 安裝類型:通孔 封裝/外殼:TO-247-3 供應(yīng)商器件封裝:TO-247 標準包裝:30 |
| STW12N60 | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | MOSFET | N-CHANNEL | 600V V(BR)DSS | 12A I(D) | TO-247 |
| STW12NA50 | 功能描述:MOSFET REORD 511-STW14NB50 TO-247 N-CH 12A 500V RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
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