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參數(shù)資料
| 型號(hào)： | STU20N03L |
| 廠商： | SamHop Microelectronics Corp. |
| 英文描述： | N-Channel Logic Level E nhancement Mode F ield E ffect Transistor |
| 中文描述： | N溝道邏輯E級(jí)nhancement F型爾德首頁(yè)ffect晶體管 |
| 文件頁(yè)數(shù)： | 4/8頁(yè) |
| 文件大?。?/td> | 801K |
| 代理商： | STU20N03L |
STU/D20N03L
Figure 5. Gate Threshold Variation
with Temperature
Figure 6. Breakdown Voltage Variation
with Temperature
V
G
g
F
,
V
G
,
B
D
,
D
I
Figure 7. Transconductance Variation
with Drain Current
I
DS
, Drain-Source Current (A)
Figure 9. Gate Charge
Qg, Total Gate Charge (nC)
Figure 10. Maximum Safe
Operating Area
V
DS
, Drain-Source Voltage (V)
Figure 8. Body Diode Forward Voltage
Variation with Source Current
V
SD
, Body Diode Forward Voltage (V)
Tj, Junction Temperature ( C)
Tj, Junction Temperature ( C)
I
D
,
4
6
20.0
10.0
0.1
1.0
0.4
0.6
0.8
1.0
1.2
1.4
1.15
1.10
1.05
1.00
0.95
0.90
0.85
0.80
-50
-25
0
25
50
75
100 125 150
V
DS
=V
GS
I
D
=250uA
-50
-25
0
25
50
75
100 125 150
1.15
1.10
1.05
1.00
0.95
0.90
0.85
I
D
=250uA
12
9
6
3
15
18
0
0
5
10
15
20
V
DS
=10V
10
8
6
4
2
0
0
3
6
9
12
15
18
21
24
V
DS
=15V
I
D
=1A
100
10
0.5
0.1
1
1
10
30
60
V
GS
=10V
Single Pulse
Tc=25 C
R
DS
(ON Lmt
DC
1s
100ms
10ms
1ms
70
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