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參數(shù)資料
| 型號(hào)： | STU20N03L |
| 廠商： | SamHop Microelectronics Corp. |
| 英文描述： | N-Channel Logic Level E nhancement Mode F ield E ffect Transistor |
| 中文描述： | N溝道邏輯E級(jí)nhancement F型爾德首頁(yè)ffect晶體管 |
| 文件頁(yè)數(shù)： | 2/8頁(yè) |
| 文件大小： | 801K |
| 代理商： | STU20N03L |
STU/D20N03L
ELECTRICAL CHARACTERISTICS (T
C
=25 C unless otherwise noted)
Parameter
Symbol
Condition
Min
Typ
Max
Unit
OFF CHARACTERISTICS
Drain-Source Breakdown Voltage
BV
DSS
V
GS
= 0V, I
D
= 250uA
30
V
Zero Gate Voltage Drain Current
I
DSS
V
DS
= 24V, V
GS
= 0V
1
uA
Gate-Body Leakage
I
GSS
V
GS
= 20V, V
DS
= 0V
nA
ON CHARACTERISTICS
a
Gate Threshold Voltage
V
GS(th)
V
DS
= V
GS
, I
D
= 250uA
1
1.5
17
30
2.5
V
Drain-Source On-State Resistance
R
DS(ON)
V
GS
= 10V, I
D
=20A
V
GS
= 4.5V, I
D
= 10A
23
39
On-State Drain Current
I
D(ON)
g
V
DS
= 10V, V
GS
= 10V
A
S
Forward Transconductance
FS
V
DS
= 10V, I
D
= 20A
DYNAMIC CHARACTERISTICS
b
Input Capacitance
C
ISS
C
RSS
C
OSS
Output Capacitance
Reverse Transfer Capacitance
V
Ds
=25V, V
GS
= 0V
f = 1.0MH
Z
P
F
P
F
P
F
SWITCHING CHARACTERISTICS
b
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
t
D(ON)
t
t
D(OFF)
t
Fall time
V
DD
= 15V
I
D
=1A
V
GS
= 10V
R
L
= 15 ohmR
GEN
= 11
ohm
ns
ns
ns
ns
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Q
g
Q
gs
Q
gd
V
DD
= 15V, I
D
= 1A
RL=15 ohm
nC
nC
nC
2
100
m ohm
m ohm
nC
V
DD
= 15V,I
D
= 1A,V
GS
=10V
V
DS
= 15V,I
D
= 1A,V
GS
=4.5V
8
614
83
61
15.2
4.5
23.3
12.7
17.8
8.8
2.8
3
50
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