參數(shù)資料
型號: STSJ50NH3LL
廠商: 意法半導(dǎo)體
英文描述: N-channel 30V - 0.008ohm - 12A - PowerSO-8 Ultra low gate charge STripFET Power MOSFET
中文描述: N溝道30V的- 0.008ohm - 12A條- PowerSO - 8超低柵極電荷STripFET功率MOSFET
文件頁數(shù): 8/13頁
文件大?。?/td> 661K
代理商: STSJ50NH3LL
Electrical characteristics
STSJ50NH3LL
8/13
The previous curve gives the single pulse safe operating area for unclamped inductive loads
under the following conditions:
P
D(AVE)
=0.5*(1.3*BV
DSS
*I
AV
)
EAS
(AR)
=P
D(AVE)
*t
AV
Where:
I
AV
is the Allowable Current in Avalanche
P
D(AVE)
is the Average Power Dissipation in Avalanche (Single Pulse)
t
AV
is the Time in Avalanche
Figure 13. Allowable Iav vs time in avalanche
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