參數(shù)資料
型號： STSJ50NH3LL
廠商： 意法半導體
英文描述： N-channel 30V - 0.008ohm - 12A - PowerSO-8 Ultra low gate charge STripFET Power MOSFET
中文描述： N溝道30V的- 0.008ohm - 12A條- PowerSO - 8超低柵極電荷STripFET功率MOSFET
文件頁數(shù)： 5/13頁
文件大?。?/td> 661K
代理商： STSJ50NH3LL
STSJ50NH3LL
Electrical characteristics
5/13
Table 6.
Switching times
Symbol
Parameter
Test condictions
Min.
Typ.
Max.
Unit
t
d(on)
t
r
Turn-on delay time
Rise time
V
DD
=15V, I
D
=6A,
R
G
=4.7
,
V
GS
=4.5V
(see Figure 14)
15
32
ns
ns
t
d(off)
t
f
Turn-off delay time
Fall time
V
DD
=15V, I
D
=6A,
R
G
=4.7
,
V
GS
=4.5V
(see Figure 14)
18
8.5
ns
ns
Table 7.
Source drain diode
Symbol
Parameter
Test Condictions
Min.
Typ.
Max.
Unit
I
SD
I
SDM(1)
1.
Pulse width limited by safe operating area
Source-drain current
Source-drain current
(pulsed)
12
48
A
A
V
SD(2)
2.
Pulsed: pulse duration=300μs, duty cycle 1.5%
Forward on voltage
I
SD
=12A, V
GS
=0
1.3
V
t
rr
Q
rr
I
RRM
Reverse recovery time
Reverse recovery charge
Reverse recovery current
I
SD
=12A, di/dt = 100A/μs,
V
DD
=20V, Tj=150°C
(see Figure 19)
24
17.4
1.45
ns
nC
A
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