參數(shù)資料
型號： STSJ50NH3LL
廠商： 意法半導(dǎo)體
英文描述： N-channel 30V - 0.008ohm - 12A - PowerSO-8 Ultra low gate charge STripFET Power MOSFET
中文描述： N溝道30V的- 0.008ohm - 12A條- PowerSO - 8超低柵極電荷STripFET功率MOSFET
文件頁數(shù)： 3/13頁
文件大?。?/td> 661K
代理商： STSJ50NH3LL
STSJ50NH3LL
Electrical ratings
3/13
1
Electrical ratings
Table 1.
Absolute maximum ratings
Symbol
Parameter
Value
Unit
V
DS
V
GS(1)
V
GS(2)
I
D(4)
I
D(3)
I
D(4)
I
D(3)
I
DM(5)
Drain-source voltage (V
GS
= 0)
30
V
1.
Continuous mode
Gate-source voltage
±16
V
2.
Guaranteed for test time < 15ms
Gate-source voltage
±18
V
Drain current (continuous) at T
C
= 25°C
50
A
3.
This value is rated accordingly to Rthj-pcb
Drain current (continuous) at T
C
=25°C
12
A
4.
This value is rated accordingly to Rthj-c
Drain current (continuous) at T
C
=100°C
31.3
A
Drain current (continuous) at T
C
=100°C
7.5
A
5.
Pulse width limited by safe operating area
Drain current (pulsed)
48
A
P
TOT
Total dissipation at T
C
= 25°C
(3)
Total dissipation at T
C
= 25°C
(4)
3
50
W
W
T
J
T
stg
Operating junction temperature
Storage temperature
-55 to 150
°C
Table 2.
Thermal resistance
Symbol
Parameter
Value
Unit
R
thj-c
R
thj-pcb(1)
Thermal resistance junction-case Max
2.5
°C/W
1.
When mounted on 1 inch2 FR-4 board, 2oz Cu (t<10sec.)
Thermal resistance junction-pcb Max
42
°C/W
Table 3.
Avalanche data
Symbol
Parameter
Value
Unit
I
AV
Not repetitive avalanche current (pulse
width limited by Tjmax)
6
A
E
AS
Single pulse avalanche energy (starting
Tj=25°C, I
D
=I
AV
, V
DD
=24V)
800
mJ
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