參數(shù)資料
型號(hào)： STSJ50NH3LL
廠商： 意法半導(dǎo)體
英文描述： N-channel 30V - 0.008ohm - 12A - PowerSO-8 Ultra low gate charge STripFET Power MOSFET
中文描述： N溝道30V的- 0.008ohm - 12A條- PowerSO - 8超低柵極電荷STripFET功率MOSFET
文件頁數(shù)： 4/13頁
文件大?。?/td> 661K
代理商： STSJ50NH3LL
Electrical characteristics
STSJ50NH3LL
4/13
2
Electrical characteristics
(T
CASE
=25°C unless otherwise specified)
Table 4.
On/off states
Symbol
Parameter
Test condictions
Min.
Typ.
Max.
Unit
V
(BR)DSS
Drain-source breakdown
voltage
I
D
= 250μA, V
GS
= 0
30
V
I
DSS
Zero gate voltage drain
current (V
GS
= 0)
V
DS
= Max rating
V
DS
= Max rating T
C
=125°C
1
10
μA
μA
I
GSS
Gate body leakage current
(V
DS
= 0)
V
GS
= ±16V
±
100
nA
V
GS(th)
Gate threshold voltage
V
DS
= V
GS
, I
D
=250μA
1
V
R
DS(on)
Static drain-source on
resistance
V
GS
= 10V, I
D
= 6A
V
GS
= 4.5V, I
D
= 6A
0.008
0.010
0.0105
0.013
R
DS(on)
Static drain-source on
resistance
V
GS
= 10V, I
D
= 6A @125°C
V
GS
= 4.5V, I
D
= 6A @125°C
0.012
0.016
Table 5.
Dynamic
Symbol
Parameter
Test Condictions
Min.
Typ.
Max.
Unit
g
fs (1)
1.
Pulsed: pulse duration=300μs, duty cycle 1.5%
Forward transconductance
V
DS
=10V, I
D
= 12A
38
S
C
iss
C
oss
C
rss
Input capacitance
Output capacitance
Reverse transfer
capacitance
V
DS
=25V, f=1MHz, V
GS
=0
965
285
38
pF
pF
pF
Q
g
Q
gs
Q
gd
Total gate charge
Gate-source charge
Gate-drain charge
V
DD
=15V, I
D
=12A
V
GS
=4.5V,(see Figure 15)
9
3.7
3
12
nC
nC
nC
R
G
Gate input resistance
f=1MHz Gate DC Bias=0
Test signal level =20mv open
drain
0.5
1.5
2.5
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