參數(shù)資料
型號(hào): STP85NF3LL
廠商: 意法半導(dǎo)體
英文描述: N-CHANNEL 30V - 0.006ohm - 85A TO-220/I2PAK LOW GATE CHARGE STripFET⑩ POWER MOSFET
中文描述: N溝道30V的- 0.006ohm - 85A條TO-220/I2PAK低柵極電荷STripFET⑩功率MOSFET
文件頁(yè)數(shù): 3/9頁(yè)
文件大?。?/td> 264K
代理商: STP85NF3LL
3/9
STP85NF3LL/STB85NF3LL-1
ELECTRICAL CHARACTERISTICS
(CONTINUED)
SWITCHING ON
Symbol
Parameter
t
d(on)
Turn-on Delay Time
SWITCHING OFF
Symbol
t
d(off)
t
f
SOURCE DRAIN DIODE
Symbol
I
SD
I
SDM
(1)
V
SD
(2)
t
rr
Q
rr
I
RRM
Note: 1.
Pulsed: Pulse duration = 300 μs, duty cycle 1.5 %.
2. Pulse width limited by safe operating area.
Test Conditions
V
DD
= 15V, I
D
= 30A
R
G
= 4.7
V
GS
= 4.5V
(see test circuit, Figure 3)
V
DD
= 24V, I
D
= 60A,
V
GS
= 4.5V
Min.
Typ.
Max.
Unit
22
ns
t
r
Rise Time
130
ns
Q
g
Q
gs
Q
gd
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
30
9
12.5
40
nC
nC
nC
Parameter
Test Conditions
V
DD
= 15V, I
D
= 30A,
R
G
= 4.7
,
V
GS
= 4.5V
(see test circuit, Figure 3)
Min.
Typ.
36.5
36.5
Max.
Unit
ns
ns
Turn-off-Delay Time
Fall Time
t
d(off)
t
f
t
c
Off-voltage Rise Time
Fall Time
Cross-over Time
Vclamp =24V, I
D
=30A
R
G
= 4.7
,
V
GS
= 4.5V
(see test circuit, Figure 5)
32
23
40
ns
ns
ns
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
Source-drain Current
85
A
Source-drain Current (pulsed)
340
A
Forward On Voltage
I
SD
= 85A, V
GS
= 0
1.3
V
Reverse Recovery Time
Reverse Recovery Charge
Reverse Recovery Current
I
SD
= 85A, di/dt = 100A/μs,
V
DD
= 15V, T
j
= 150°C
(see test circuit, Figure 5)
65
105
3.4
ns
nC
A
Thermal Impedence
Safe Operating Area
相關(guān)PDF資料
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STB85NF3LL-1 N-CHANNEL 30V - 0.006ohm - 85A TO-220/I2PAK LOW GATE CHARGE STripFET⑩ POWER MOSFET
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