參數(shù)資料
型號(hào): STP85NF3LL
廠商: 意法半導(dǎo)體
英文描述: N-CHANNEL 30V - 0.006ohm - 85A TO-220/I2PAK LOW GATE CHARGE STripFET⑩ POWER MOSFET
中文描述: N溝道30V的- 0.006ohm - 85A條TO-220/I2PAK低柵極電荷STripFET⑩功率MOSFET
文件頁(yè)數(shù): 2/9頁(yè)
文件大?。?/td> 264K
代理商: STP85NF3LL
STP85NF3LL/STB85NF3LL-1
2/9
THERMAL DATA
Rthj-case
Rthj-amb
T
l
ELECTRICAL CHARACTERISTICS
(TCASE
= 25 °C UNLESS OTHERWISE SPECIFIED)
OFF
Symbol
Parameter
V
(BR)DSS
Drain-source
Breakdown Voltage
I
DSS
Zero Gate Voltage
Drain Current (V
GS
= 0)
V
DS
= Max Rating, T
C
= 125 °C
I
GSS
Gate-body Leakage
Current (V
DS
= 0)
ON
(1)
Symbol
V
GS(th)
R
DS(on)
DYNAMIC
Symbol
g
fs
(1)
Thermal Resistance Junction-case Max
Thermal Resistance Junction-ambient Max
1.36
62.5
°C/W
°C/W
Maximum Lead Temperature For Soldering Purpose
300
°C
Test Conditions
I
D
= 250 μA, V
GS
= 0
Min.
30
Typ.
Max.
Unit
V
V
DS
= Max Rating
1
μA
10
μA
V
GS
= ± 15V
±100
nA
Parameter
Test Conditions
V
DS
= V
GS
, I
D
= 250μA
V
GS
= 10V, I
D
= 40 A
V
GS
= 4.5V, I
D
= 40 A
Min.
Typ.
Max.
Unit
Gate Threshold Voltage
1
V
Static Drain-source On
Resistance
0.006
0.008
0.0075
0.0095
Parameter
Test Conditions
V
DS
> I
D(on)
x R
DS(on)max,
I
D
= 40 A
V
DS
= 25V, f = 1 MHz, V
GS
= 0
Min.
Typ.
30
Max.
Unit
S
Forward Transconductance
C
iss
C
oss
Input Capacitance
2210
pF
Output Capacitance
635
pF
C
rss
Reverse Transfer
Capacitance
138
pF
相關(guān)PDF資料
PDF描述
STB85NF3LL-1 N-CHANNEL 30V - 0.006ohm - 85A TO-220/I2PAK LOW GATE CHARGE STripFET⑩ POWER MOSFET
STB85NF3LL N-CHANNEL 30V - 0.006ohm - 85A D2PAK LOW GATE CHARGE STripFET⑩II POWER MOSFET
STP9NB50FP N-Channel Enhancement Mode PowerMESHTM MOSFET(N溝道增強(qiáng)模式MOSFET)
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