參數(shù)資料
型號(hào)： STB85NF3LL-1
廠商： 意法半導(dǎo)體
英文描述： N-CHANNEL 30V - 0.006ohm - 85A TO-220/I2PAK LOW GATE CHARGE STripFET⑩ POWER MOSFET
中文描述： N溝道30V的- 0.006ohm - 85A條TO-220/I2PAK低柵極電荷STripFET⑩功率MOSFET
文件頁(yè)數(shù)： 1/9頁(yè)
文件大小： 264K
代理商： STB85NF3LL-1
1/9
PRELIMINARY DATA
March 2001
STP85NF3LL
STB85NF3LL-1
N-CHANNEL 30V - 0.006
- 85A TO-220/I
2
PAK
LOW GATE CHARGE STripFET POWER MOSFET
I
TYPICAL R
DS
(on) = 0.0075
(@4.5V)
I
OPTIMAL R
DS(ON)
x Qg TRADE-OFF @4.5V
I
CONDUCTION LOSSES REDUCED
I
SWITCHING LOSSES REDUCED
DESCRIPTION
This application specific Power MOSFET is the
third genaration of STMicroelectronics unique “
Single Feature Size” strip-based process. The re-
sulting transistor shows the best trade-off between
on-resistance and gate charge. When used as
high and low side in buck regulators, it gives the
best performance in terms of both conduction and
switching losses. This is extremely important for
motherboards where fast switching and high effi-
ciency are of paramount importance.
APPLICATIONS
I
SPECIFICALLY DESIGNED AND OPTIMISED
FOR HIGH EFFICIENCY CPU CORE DC/DC
CONVERTERS
ABSOLUTE MAXIMUM RATINGS
Symbol
V
DS
Drain-source Voltage (V
GS
= 0)
V
DGR
Drain-gate Voltage (R
GS
= 20 k
)
V
GS
Gate- source Voltage
I
D
Drain Current (continuos) at T
C
= 25°C
I
D
Drain Current (continuos) at T
C
= 100°C
I
DM
(
G
)
Drain Current (pulsed)
P
TOT
Total Dissipation at T
C
= 25°C
Derating Factor
T
stg
Storage Temperature
T
j
Max. Operating Junction Temperature
(
G
) Pulse width limited by safe operating area
TYPE
V
DSS
R
DS(on)
I
D
STP85NF3LL
STB85NF3LL-1
30 V
30 V
< 0.008
< 0.008
85 A
85 A
Parameter
Value
Unit
30
V
30
V
± 15
V
85
A
60
A
340
A
110
W
0.73
W/°C
–65 to 175
°C
175
°C
TO-220
1
2
3
123
I
2
PAK
INTERNAL SCHEMATIC DIAGRAM
相關(guān)PDF資料
PDF描述
STB85NF3LL N-CHANNEL 30V - 0.006ohm - 85A D2PAK LOW GATE CHARGE STripFET⑩II POWER MOSFET
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STP9NB60FP N-Channel Enhancement Mode PowerMESHTM MOSFET(N溝道增強(qiáng)模式MOSFET)
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相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
STB85NF3LLT4 功能描述:MOSFET N-Ch 30 Volt 85 Amp RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
STB85NF55 制造商:STMICROELECTRONICS 制造商全稱(chēng):STMicroelectronics 功能描述:N-channel 55 V, 0.0062 Ω, 80 A, TO-220, D2PAK, I2PAK STripFET? II Power MOSFET
STB85NF55_09 制造商:STMICROELECTRONICS 制造商全稱(chēng):STMicroelectronics 功能描述:N-channel 55 V, 0.0062 Ω, 80 A, TO-220, D2PAK, I2PAK STripFET? II Power MOSFET
STB85NF55L 制造商:STMICROELECTRONICS 制造商全稱(chēng):STMicroelectronics 功能描述:N-channel 55 V, 0.0060 Ω, 80 A, TO-220, D2PAK STripFET? II Power MOSFET
STB85NF55L_09 制造商:STMICROELECTRONICS 制造商全稱(chēng):STMicroelectronics 功能描述:N-channel 55 V, 0.0060 Ω, 80 A, TO-220, D2PAK STripFET? II Power MOSFET
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