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參數(shù)資料
| 型號(hào)： | STP85NF3LL |
| 廠商： | 意法半導(dǎo)體 |
| 英文描述： | N-CHANNEL 30V - 0.006ohm - 85A TO-220/I2PAK LOW GATE CHARGE STripFET⑩ POWER MOSFET |
| 中文描述： | N溝道30V的- 0.006ohm - 85A條TO-220/I2PAK低柵極電荷STripFET⑩功率MOSFET |
| 文件頁數(shù)： | 1/9頁 |
| 文件大?。?/td> | 264K |
| 代理商： | STP85NF3LL |
1/9
PRELIMINARY DATA
March 2001
STP85NF3LL
STB85NF3LL-1
N-CHANNEL 30V - 0.006
- 85A TO-220/I
2
PAK
LOW GATE CHARGE STripFET POWER MOSFET
I
TYPICAL R
DS
(on) = 0.0075
(@4.5V)
I
OPTIMAL R
DS(ON)
x Qg TRADE-OFF @4.5V
I
CONDUCTION LOSSES REDUCED
I
SWITCHING LOSSES REDUCED
DESCRIPTION
This application specific Power MOSFET is the
third genaration of STMicroelectronics unique “
Single Feature Size” strip-based process. The re-
sulting transistor shows the best trade-off between
on-resistance and gate charge. When used as
high and low side in buck regulators, it gives the
best performance in terms of both conduction and
switching losses. This is extremely important for
motherboards where fast switching and high effi-
ciency are of paramount importance.
APPLICATIONS
I
SPECIFICALLY DESIGNED AND OPTIMISED
FOR HIGH EFFICIENCY CPU CORE DC/DC
CONVERTERS
ABSOLUTE MAXIMUM RATINGS
Symbol
V
DS
Drain-source Voltage (V
GS
= 0)
V
DGR
Drain-gate Voltage (R
GS
= 20 k
)
V
GS
Gate- source Voltage
I
D
Drain Current (continuos) at T
C
= 25°C
I
D
Drain Current (continuos) at T
C
= 100°C
I
DM
(
G
)
Drain Current (pulsed)
P
TOT
Total Dissipation at T
C
= 25°C
Derating Factor
T
stg
Storage Temperature
T
j
Max. Operating Junction Temperature
(
G
) Pulse width limited by safe operating area
TYPE
V
DSS
R
DS(on)
I
D
STP85NF3LL
STB85NF3LL-1
30 V
30 V
< 0.008
< 0.008
85 A
85 A
Parameter
Value
Unit
30
V
30
V
± 15
V
85
A
60
A
340
A
110
W
0.73
W/°C
–65 to 175
°C
175
°C
TO-220
1
2
3
123
I
2
PAK
INTERNAL SCHEMATIC DIAGRAM
相關(guān)PDF資料 |
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|---|---|
| STB85NF3LL-1 | N-CHANNEL 30V - 0.006ohm - 85A TO-220/I2PAK LOW GATE CHARGE STripFET⑩ POWER MOSFET |
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