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參數(shù)資料
| 型號： | STP60NS04ZB |
| 廠商： | 意法半導(dǎo)體 |
| 英文描述： | N-CHANNEL CLAMPED 10mohm - 60A TO-220 FULLY PROTECTED MESH OVERLAY⑩ MOSFET |
| 中文描述： | N通道鉗位10mohm - 60A至- 220充分保護(hù)MOSFET的網(wǎng)格密胺⑩ |
| 文件頁數(shù)： | 2/8頁 |
| 文件大?。?/td> | 292K |
| 代理商： | STP60NS04ZB |
STP60NS04ZB
2/8
THERMAL DATA
Rthj-case
Rthj-amb
T
l
AVALANCHE CHARACTERISTICS
Symbol
I
AR
Avalanche Current, Repetitive or Not-Repetitive
(pulse width limited by T
j
max,
δ
< 1%)
E
AS
Single Pulse Avalanche Energy
(starting T
j
= 25 °C, I
D
= I
AR
, V
DD
= 30 V )
ELECTRICAL CHARACTERISTICS
(T
CASE
= 25°C UNLESS OTHERWISE SPECIFIED)
OFF
Symbol
Parameter
V
(BR)DSS
Clamped Voltage
I
D
= 1 mA, V
GS
= 0
-40 < Tj < 175 °C
I
DSS
Zero Gate Voltage
Drain Current (V
GS
= 0)
V
DS
= 16 V,T
j
= 175 °C
I
GSS
Gate-body Leakage
Current (V
DS
= 0)
V
GS
= ±16 V,T
j
= 175 °C
V
GSS
Gate-Source
Breakdown Voltage
ON (1)
Symbol
V
GS(th)
DYNAMIC
Symbol
g
fs
(1)
C
iss
C
oss
C
rss
Thermal Resistance Junction-case Max
Thermal Resistance Junction-ambient Max
1.0
62.5
°C/W
°C/W
Maximum Lead Temperature For Soldering Purpose
300
°C
Parameter
Max Value
60
Unit
A
400
mJ
Test Conditions
Min.
33
Typ.
Max.
Unit
V
V
DS
= 16 V,T
j
= 150 °C
50
μA
100
μA
V
GS
= ±10 V,T
j
= 175 °C
50
150
μA
μA
I
GS
= ±100 μA
18
V
Parameter
Test Conditions
V
DS
= V
GS
, I
D
= 1 mA
-40 < Tj < 150 °C
V
GS
= 10 V, I
D
= 30 A
V
GS
= 16 V, I
D
= 30 A
Min.
1.7
Typ.
3
Max.
4.2
Unit
V
Gate Threshold Voltage
R
DS(on)
Static Drain-source On
Resistance
11
15
m
m
10
14
Parameter
Test Conditions
V
DS
=15 V ,I
D
= 30 A
V
DS
= 25 V, f = 1 MHz, V
GS
= 0
Min.
20
Typ.
40
Max.
Unit
S
Forward Transconductance
Input Capacitance
1700
2100
pF
Output Capacitance
800
1000
pF
Reverse Transfer
Capacitance
190
240
pF
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