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參數(shù)資料
| 型號(hào)： | STP60NS04ZB |
| 廠商： | 意法半導(dǎo)體 |
| 英文描述： | N-CHANNEL CLAMPED 10mohm - 60A TO-220 FULLY PROTECTED MESH OVERLAY⑩ MOSFET |
| 中文描述： | N通道鉗位10mohm - 60A至- 220充分保護(hù)MOSFET的網(wǎng)格密胺⑩ |
| 文件頁數(shù)： | 1/8頁 |
| 文件大小： | 292K |
| 代理商： | STP60NS04ZB |
1/8
November 2002
STP60NS04ZB
N-CHANNEL CLAMPED 10m
- 60A TO-220
FULLY PROTECTED MESH OVERLAY MOSFET
TO-220
1
2
3
INTERNAL SCHEMATIC DIAGRAM
I
TYPICAL R
DS
(on) = 0.010
I
100% AVALANCHE TESTED
I
LOW CAPACITANCE AND GATE CHARGE
I
175°C MAXIMUM JUNCTION TEMPERATURE
DESCRIPTION
This fully clamped MOSFET is produced by using
the latest advanced Company’s Mesh Overlay pro-
cess which is based on a novel strip layout. The in-
herent benefits of the new technology coupled with
the extra clamping capabilities make this product
particularly suitable for the harshest operation con-
ditions such as those encountered in the automotive
environment .Any other application requiring extra
ruggedness is also recommended.
APPLICATIONS
I
ABS,SOLENOID DRIVERS
I
MOTOR CONTROL
I
DC-DC CONVERTERS
ABSOLUTE MAXIMUM RATINGS
Symbol
V
DS
Drain-source Voltage (V
GS
= 0)
V
DG
Drain-gate Voltage
V
GS
Gate- source Voltage
I
D
Drain Current (continuous) at T
C
= 25°C
I
D
Drain Current (continuous) at T
C
= 100°C
I
DG
Drain Gate Current (continuous)
I
GS
Gate Source Current (continuous)
I
DM
( )
Drain Current (pulsed)
P
TOT
Total Dissipation at T
C
= 25°C
Derating Factor
V
ESD(G-S)
Gate-Source ESD(HBM-C=100 pF, R=1.5 K
)
V
ESD(G-D)
Gate-Drain ESD(HBM-C=100 pF, R=1.5 K
)
V
ESD(D-S)
Drain-Source ESD(HBM-C=100 pF, R=1.5 K
)
T
stg
Storage Temperature
T
j
Max. Operating Junction Temperature
()Pulse width limited by safe operating area
TYPE
V
DSS
R
DS(on)
I
D
STP60NS04ZB
CLAMPED
< 0.015
60 A
Parameter
Value
Unit
CLAMPED
V
CLAMPED
V
CLAMPED
V
60
A
42
A
±
50
±
50
mA
mA
240
A
150
W
1
W/°C
6
kV
4
kV
4
kV
–65 to 175
°C
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| STP60NS04ZB_06 | 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:N-channel clamped - 10mohm - 60A - TO-220 Fully protected Mesh Overlay Power MOSFET |
| STP6-1025 | 制造商:Carlo Gavazzi 功能描述: |
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| STP62NS04Z | 功能描述:MOSFET N-Ch Clamped 62 Amp RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| STP62NS04Z_06 | 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:N-channel clamped 12.5mOHM - 62A - TO-220 Fully protected MESH OVERLAY Power MOSFET |
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