- 您現(xiàn)在的位置：買賣IC網(wǎng) > PDF目錄380775 > STP24NF10 (意法半導體) N - CHANNEL 100V - 0.07ohm - 24A TO-220 LOW GATE CHARGE STripFET POWER MOSFET PDF資料下載
參數(shù)資料
| 型號： | STP24NF10 |
| 廠商： | 意法半導體 |
| 英文描述： | N - CHANNEL 100V - 0.07ohm - 24A TO-220 LOW GATE CHARGE STripFET POWER MOSFET |
| 中文描述： | ? - 100V的通道- 0.07ohm - 24A至- 220低柵極電荷STripFET功率MOSFET |
| 文件頁數(shù)： | 1/6頁 |
| 文件大?。?/td> | 48K |
| 代理商： | STP24NF10 |
STP24NF10
N - CHANNEL 100V - 0.07
- 24A TO-220
LOW GATE CHARGE STripFET
POWER MOSFET
PRELIMINARY DATA
I
TYPICAL R
DS(on)
= 0.07
I
EXCEPTIONAL dv/dtCAPABILITY
I
100%AVALANCHE TESTED
I
APPLICATIONORIENTED
CHARACTERIZATION
DESCRIPTION
This
STMicroelectronics unique STripFET process has
specifically been designed to minimize input
capacitance and gate charge. It is therefore
suitable
as
primary
high-efficiency, high-frequency isolated DC-DC
converters
for
Telecom
applications.
It
is
also
applicationswith low gate drive requirements.
MOSFET
series
realized
with
switch
in
advanced
and
Computer
for
intended
any
APPLICATIONS
I
HIGH-EFFICIENCYDC-DC CONVERTERS
I
UPSAND MOTOR CONTROL
INTERNAL SCHEMATIC DIAGRAM
April 2000
ABSOLUTE MAXIMUM RATINGS
Symbol
V
DS
V
DGR
V
GS
I
D
I
D
I
DM
(
)
P
tot
Parameter
Value
100
100
±
20
24
15
96
80
0.53
9
75
-65 to 175
175
(1) I
SD
≤
24 A, di/dt
≤
300A/
μ
s, V
DD
≤
V
(BR)DSS
, T
j
≤
T
JMA
Unit
V
V
V
A
A
A
W
W/
o
C
V/ns
mJ
o
C
o
C
Drain-source Voltage (V
GS
= 0)
Drain- gate Voltage (R
GS
= 20 k
)
Gate-source Voltage
Drain Current (continuous) at T
c
= 25
o
C
Drain Current (continuous) at T
c
= 100
o
C
Drain Current (pulsed)
Total Dissipation at T
c
= 25
o
C
Derating Factor
Peak Diode Recovery voltage slope
Single Pulse Avalanche Energy
Storage Temperature
Max. Operating Junction Temperature
(
) Pulse width limitedby safe operatingarea
dv/dt(
1
)
E
AS
(
2
)
T
stg
T
j
(2) starting T
j
= 25
o
C, I
D
=24A, V
DD
= 50V
TYPE
V
DSS
R
DS(on)
< 0.077
I
D
STP24NF10
100 V
24 A
1
2
3
TO-220
1/6
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| STP25N06FI | N-Channel Enhancement Mode Power MOS Transistor(N溝道增強模式功率MOSFET) |
| STP25NM50N | N-CHANNEL 500V 0.11ohm - 22 A TO-220/FP/D/IPAK/TO-247 SECOND GENERATION MDmesh MOSFET |
| STW25NM50N | N-CHANNEL 500V 0.11ohm - 22 A TO-220/FP/D/IPAK/TO-247 SECOND GENERATION MDmesh MOSFET |
| STB25NM50N-1 | N-CHANNEL 500V 0.11ohm - 22 A TO-220/FP/D/IPAK/TO-247 SECOND GENERATION MDmesh MOSFET |
| STP30N06FI | N-Channel Enhancement Mode Power MOS Transistor(N溝道增強模式功率MOSFET) |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| STP24NF10 | 制造商:STMicroelectronics 功能描述:MOSFET N TO-220 |
| STP24NM60N | 功能描述:MOSFET N-Ch 600V 0.168 Ohm 17A Mdmesh II RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| STP24NM65N | 功能描述:MOSFET N-channel 650V RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| STP25N05 | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | MOSFET | N-CHANNEL | 50V V(BR)DSS | 25A I(D) | TO-220 |
| STP25N05FI | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | MOSFET | N-CHANNEL | 50V V(BR)DSS | 16A I(D) | TO-220VAR |
發(fā)布緊急采購，3分鐘左右您將得到回復。