參數(shù)資料
型號(hào): STP20NF20
廠商: 意法半導(dǎo)體
英文描述: N-channel 200V - 0.10ヘ -18A- DPAK/TO-220/TO-220FP Low gate charge STripFET⑩ Power MOSFET
中文描述: N溝道200伏- 0.10ヘ- 18A條,DPAK/TO-220/TO-220FP低柵極電荷STripFET⑩功率MOSFET
文件頁(yè)數(shù): 4/16頁(yè)
文件大?。?/td> 493K
代理商: STP20NF20
Electrical characteristics
STD20NF20 - STF20NF20 - STP20NF20
4/16
2
Electrical characteristics
(T
CASE
=25°C unless otherwise specified)
Table 4.
On/off states
Symbol
Parameter
Test conditions
Min.
Typ.
Max.
Unit
V
(BR)DSS
Drain-source
breakdown voltage
I
D
= 1 mA, V
GS
= 0
200
V
I
DSS
Zero gate voltage
drain current (V
GS
= 0)
V
DS
= Max rating
V
DS
= Max rating, T
C
= 125°C
1
10
μA
μA
I
GSS
Gate-body leakage
current (V
DS
= 0)
V
GS
= ± 20V
±100
nA
V
GS(th)
Gate threshold voltage
V
DS
= V
GS
, I
D
= 250 μA
2
3
4
V
R
DS(on)
Static drain-source on
resistance
V
GS
= 10V, I
D
= 10 A
0.10
0.125
Table 5.
Dynamic
Symbol
Parameter
Test conditions
Min.
Typ.
Max.
Unit
g
fs (1)
1.
Pulsed: Pulse duration = 300 μs, duty cycle 1.5%.
Forward
transconductance
V
DS
= 25 V
,
I
D
= 10 A
13
S
C
iss
C
oss
C
rss
Input capacitance
Output capacitance
Reverse transfer
capacitance
V
DS
= 25V, f = 1 MHz, V
GS
= 0
940
197
30
pF
pF
pF
t
d(on)
t
r
t
d(off)
t
r
Turn-on delay time
Rise time
Turn-off delay time
Fall time
V
DD
= 100 V, I
D
= 10 A,
R
G
= 4.7
V
GS
= 10 V
(see Figure 14)
15
30
40
10
ns
ns
ns
ns
Q
g
Q
gs
Q
gd
Total gate charge
Gate-source charge
Gate-drain charge
V
DD
= 160V, I
D
= 20 A,
V
GS
= 10V
(see Figure 15)
28
5.6
14.5
39
nC
nC
nC
相關(guān)PDF資料
PDF描述
STD29NF03L N-CHANNEL 30V - 0.018 ohm - 29A DPAK LOW GATE CHARGE STripFET POWER MOSFET
STD2NB60-1 N-CHANNEL 600V - 3.3OHM - 2.6A DPAK/IPAK PowerMESHTM MOSFET
STD2NB60 N - CHANNEL ENHANCEMENT MODE PowerMESH MOSFET
STD2NB60T4 N-CHANNEL 600V - 3.3OHM - 2.6A DPAK/IPAK PowerMESHTM MOSFET
STD30NE06L N-Channel 60V-0.025Ω-30A-DPAK STripFETTM ” Power MOSFET(N溝道功率MOSFET)
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
STP20NK50Z 功能描述:MOSFET N-Ch 500 Volt 17 Amp Zener SuperMESH RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS(導(dǎo)通):0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
STP20NK50Z_04 制造商:STMICROELECTRONICS 制造商全稱(chēng):STMicroelectronics 功能描述:N-CHANNEL 500V -0.23ヘ- 17A TO-220/D2PAK/I2SPAK/TO-247 Zener-Protected SuperMESH⑩ MOSFET
STP20NK50Z-1 制造商:STMicroelectronics 功能描述:
STP20NM50 功能描述:MOSFET N-Ch 500 Volt 20 Amp RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS(導(dǎo)通):0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
STP20NM505 制造商:STMICROELECTRONICS 制造商全稱(chēng):STMicroelectronics 功能描述:N-CHANNEL 500V - 0.20ohm - 20A TO-220/FP/D2PAK/I2PAK MDmesh?Power MOSFET