參數資料
型號： STP20N06FI
廠商： 意法半導體
英文描述： N-Channel Enhancement Mode Power MOS Transistor(N溝道增強模式功率MOSFET)
中文描述： N溝道增強模式功率MOS晶體管（不適用溝道增強模式功率MOSFET的）
文件頁數： 1/10頁
文件大?。?/td> 204K
代理商： STP20N06FI
STP20N06
STP20N06FI
N - CHANNEL ENHANCEMENT MODE
POWER MOS TRANSISTOR
I
TYPICAL R
DS(on)
= 0.06
I
AVALANCHE RUGGED TECHNOLOGY
I
100% AVALANCHE TESTED
I
REPETITIVE AVALANCHE DATA AT 100
o
C
I
LOW GATE CHARGE
I
HIGH CURRENT CAPABILITY
I
175
o
C OPERATING TEMPERATURE
I
APPLICATION ORIENTED
CHARACTERIZATION
APPLICATIONS
I
HIGH CURRENT, HIGH SPEED SWITCHING
I
SOLENOID AND RELAY DRIVERS
I
REGULATORS
I
DC-DC & DC-AC CONVERTERS
I
MOTOR CONTROL, AUDIO AMPLIFIERS
I
AUTOMOTIVE ENVIRONMENT (INJECTION,
ABS, AIR-BAG, LAMPDRIVERS, Etc.)
INTERNAL SCHEMATIC DIAGRAM
TYPE
V
DSS
R
DS(on)
< 0.085
< 0.085
I
D
STP20N06
STP20N06FI
60 V
60 V
20 A
13 A
1
2
3
TO-220
ISOWATT220
December 1996
ABSOLUTE MAXIMUM RATINGS
Symbol
Parameter
Value
Unit
STP20N06
STP20N06FI
V
DS
Drain-source Voltage (V
GS
= 0)
Drain- gate Voltage (R
GS
= 20 k
)
Gate-source Voltage
Drain Current (continuous) at T
c
= 25
o
C
Drain Current (continuous) at T
c
= 100
o
C
60
V
V
DGR
60
V
V
GS
±
20
V
I
D
20
13
A
I
D
14
9
A
I
DM
(
)
P
tot
Drain Current (pulsed)
Total Dissipation at T
c
= 25
o
C
80
80
A
80
35
W
Derating Factor
0.53
0.23
W/
o
C
V
ISO
Insulation Withstand Voltage (DC)
2000
V
o
C
o
C
T
stg
Storage Temperature
-65 to 175
T
j
Max. Operating Junction Temperature
(
) Pulsewidth limited by safe operating area
175
1
2
3
1/10
相關PDF資料
PDF描述
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相關代理商/技術參數
參數描述
STP20N10 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR
STP20N10FI 制造商:未知廠家 制造商全稱:未知廠家 功能描述:OLD PRODUCT: NOT SUITABLE FOR NEW DESIGN-IN
STP20N10L 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:N - CHANNEL ENHANCEMENT MODE LOW THRESHOLD POWER MOS TRANSISTOR
STP20N10LFI 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:N - CHANNEL ENHANCEMENT MODE LOW THRESHOLD POWER MOS TRANSISTOR
STP20N20 功能描述:MOSFET N-Ch 200 Volt 18 Amp RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
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