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參數(shù)資料
| 型號： | STP20NE06FP |
| 廠商： | 意法半導體 |
| 英文描述： | N-Channel 60V-0.07Ω-20A- TO-220/TO-220FP STripFETTM Power MOSFET(N溝道功率MOSFET) |
| 中文描述： | N溝道60V的-0.07Ω- 20A條，TO-220/TO-220FP STripFETTM功率MOSFET（不適用溝道功率MOSFET的） |
| 文件頁數(shù)： | 1/6頁 |
| 文件大小： | 45K |
| 代理商： | STP20NE06FP |
STP20NE06
STP20NE06FP
N - CHANNEL 60V - 0.07
- 20A - TO-220/TO-220FP
STripFET
POWER MOSFET
PRELIMINARY DATA
I
TYPICAL R
DS(on)
= 0.07
I
AVALANCHERUGGED TECHNOLOGY
I
100% AVALANCHE TESTED
I
175
o
C OPERATING TEMPERATURE
I
HIGH dV/dt CAPABILITY
I
APPLICATION ORIENTED
CHARACTERIZATION
DESCRIPTION
This Power Mosfet is the latest development of
SGS-THOMSON unique ”Single Feature Size”
process whereby a single body is implanted on a
strip layout structure. The resulting transistor
shows extremely high packing density for low on-
resistance, rugged avalance characteristics and
less critical alignment steps therefore a remark-
able manufacturingreproducibility.
APPLICATIONS
I
DC MOTORCONTROL
I
DC-DC & DC-AC CONVERTERS
I
SYNCHRONOUS RECTIFICATION
INTERNAL SCHEMATIC DIAGRAM
ABSOLUTE MAXIMUM RATINGS
Symbol
Parameter
Value
Unit
STP20NE06
STP20NE06FP
60
60
±
20
V
DS
V
DGR
V
GS
I
D
I
D
I
DM
(
)
P
tot
Drain-source Voltage (V
GS
= 0)
Drain- gate Voltage (R
GS
= 20 k
)
Gate-source Voltage
Drain Current (continuous) at T
c
= 25
o
C
Drain Current (continuous) at T
c
= 100
o
C
Drain Current (pulsed)
Total Dissipation at T
c
= 25
o
C
Derating Factor
Insulation Withstand Voltage (DC)
Peak Diode Recovery voltage slope
Storage Temperature
Max. Operating Junction Temperature
(
) Pulse width limitedby safe operating area
’
V
V
V
A
A
A
W
20
14
80
70
13
9
80
30
0.47
0.2
2000
W/
o
C
V
V/ns
o
C
o
C
V
ISO
dV/dt
T
stg
T
j
7
-65 to 175
175
(
1
) I
SD
≤
20 A,di/dt
≤
200 A/
μ
s, V
DD
≤
V
(BR)DSS
, T
j
≤
T
JMAX
TYPE
V
DSS
R
DS(on)
< 0.085
< 0.085
I
D
STP20NE06
STP20NE06FP
60 V
60 V
20 A
13 A
June 1998
TO-220
TO-220FP
1
2
3
1
2
3
1/9
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| STP20NE06L | 功能描述:MOSFET N-Ch 60 Volt 20 Amp RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| STP20NE06LFP | 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:N - CHANNEL 60V - 0.06 ohm - 20A TO-220/TO-220FP STripFET POWER MOSFET |
| STP20NE10 | 功能描述:MOSFET RO 511-STP24NF10 TO-220 N-CH 100V 20A RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| STP20NF06 | 功能描述:MOSFET N-Ch 60 Volt 20 Amp RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| STP20NF06_07 | 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:N-channel 60V - 0.06 - 20A - TO-220/TO-220FP STripFET II Power MOSFET |
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