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參數(shù)資料
| 型號(hào)： | STP19N06LFI |
| 廠商： | 意法半導(dǎo)體 |
| 英文描述： | N-Channel Enhancement Mode Low Threshold Power MOS Transistor(N溝道增強(qiáng)模式低閾值功率MOSFET) |
| 中文描述： | N溝道增強(qiáng)模式的低閾值功率MOS晶體管（不適用溝道增強(qiáng)模式低閾值功率MOSFET的） |
| 文件頁數(shù)： | 7/7頁 |
| 文件大?。?/td> | 141K |
| 代理商： | STP19N06LFI |
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PDF描述 |
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| STP200NF03 | N-CHANNEL 30V - 0.0032 ohm - 120A DPAK/IPAK/TO-220 STripFET⑩ II POWER MOSFET |
| STB200NF04 | 30V N-Channel PowerTrench MOSFET |
| STB200NF04-1 | 30V N-Channel PowerTrench MOSFET |
| STB200NF04T4 | 30V N-Channel PowerTrench MOSFET |
| STP200NF04 | 30V N-Channel PowerTrench MOSFET |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| STP19NB20 | 功能描述:MOSFET N-Ch 200 Volt 19 Amp RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| STP19NB20FP | 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:N-CHANNEL 200V - 0.15ohm - 19A - TO-220/TO-220FP/I2PAK PowerMESH⑩ MOSFET |
| STP19NB20FP | 制造商:STMicroelectronics 功能描述:MOSFET N TO-220FP |
| STP19NF20 | 功能描述:MOSFET N-CHANNEL 200V 0.15 OHM - 15A RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| STP19NM50N | 功能描述:MOSFET N-Ch 500V 14A Mosfet Mdmesh II Power RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
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