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參數(shù)資料
| 型號(hào)： | STP200NF03 |
| 廠商： | 意法半導(dǎo)體 |
| 英文描述： | N-CHANNEL 30V - 0.0032 ohm - 120A DPAK/IPAK/TO-220 STripFET⑩ II POWER MOSFET |
| 中文描述： | N溝道30V的- 0.0032歐姆- 120A條?巴基斯坦/我PAK/TO-220 STripFET⑩二功率MOSFET |
| 文件頁數(shù)： | 1/14頁 |
| 文件大小： | 557K |
| 代理商： | STP200NF03 |
1/14
AUTOMOTIVE SPECIFIC
October 2002
STP200NF03
STB200NF03 STB200NF03-1
N-CHANNEL 30V - 0.0032
- 120A D
2
PAK/I
2
PAK/TO-220
STripFET II POWER MOSFET
I
TYPICAL R
DS
(on) = 0.0032
I
STANDARD THRESHOLD DRIVE
I
100% AVALANCHE TESTED
DESCRIPTION
This Power MOSFET is the latest development of
STMicroelectronis unique "Single Feature Size"
strip-based process. The resulting transistor
shows extremely high packing density for low on-
resistance, rugged avalanche characteristics and
less
critical
alignment
remarkable manufacturing reproducibility.
steps
therefore
a
APPLICATIONS
I
HIGH CURRENT, HIGH SWITCHING SPEED
I
DC-DC & DC-AC CONVERTERS
I
SOLENOID AND RELAY DRIVERS
TYPE
V
DSS
R
DS(on)
I
D
STB200NF03/-1
STP200NF03
30 V
30 V
<0.0036
<0.0036
120 A
(**)
120 A
(**)
1
2
3
1
3
123
TO-220
D
2
PAK
TO-263
I
2
PAK
TO-262
INTERNAL SCHEMATIC DIAGRAM
Ordering Information
SALES TYPE
STB200NF03T4
STP200NF03
STB200NF03-1
ABSOLUTE MAXIMUM RATINGS
Symbol
V
DS
Drain-source Voltage (V
GS
= 0)
V
DGR
Drain-gate Voltage (R
GS
= 20 k
)
V
GS
Gate- source Voltage
I
D
(**)
Drain Current (continuous) at T
C
= 25°C
I
D
Drain Current (continuous) at T
C
= 100°C
I
DM
(
)
Drain Current (pulsed)
P
tot
Total Dissipation at T
C
= 25°C
Derating Factor
dv/dt
(1)
Peak Diode Recovery voltage slope
E
AS (2)
Single Pulse Avalanche Energy
T
stg
Storage Temperature
T
j
Operating Junction Temperature
(
)
Pulse width limited by safe operating area.
(**) Current Limited by Package
(1) I
≤
120A, di/dt
≤
400A/μs, V
≤
V
, T
j
≤
T
JMAX
(2) Starting T
j
= 25
o
C, I
D
= 60 A, V
DD
= 25 V
MARKING
B200NF03
P200NF03
B200NF03
PACKAGE
D
2
PAK
TO-220
I
2
PAK
PACKAGING
TAPE & REEL
TUBE
TUBE
Parameter
Value
30
30
± 20
120
120
480
300
2.0
1.5
1.45
Unit
V
V
V
A
A
A
W
W/°C
V/ns
J
-55 to 175
°C
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