參數(shù)資料
型號(hào): STP19N06LFI
廠商: 意法半導(dǎo)體
英文描述: N-Channel Enhancement Mode Low Threshold Power MOS Transistor(N溝道增強(qiáng)模式低閾值功率MOSFET)
中文描述: N溝道增強(qiáng)模式的低閾值功率MOS晶體管(不適用溝道增強(qiáng)模式低閾值功率MOSFET的)
文件頁數(shù): 3/7頁
文件大?。?/td> 141K
代理商: STP19N06LFI
ELECTRICAL CHARACTERISTICS
(continued)
SWITCHING ON
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
t
d(on)
t
r
Turn-on Time
Rise Time
V
DD
= 30 V I
D
= 9.5 A
R
G
= 4.7
V
GS
= 5 V
(see test circuit, figure 3)
V
DD
= 40 V I
D
= 19 A
R
G
= 47
V
GS
= 5 V
(see test circuit, figure 5)
V
DD
= 40 V I
D
= 19 A V
GS
= 5 V
15
165
21
230
ns
ns
(di/dt)
on
Turn-on Current Slope
70
A/
μ
s
Q
g
Q
gs
Q
gd
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
18
7
9
26
nC
nC
nC
SWITCHING OFF
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
t
r(Voff)
t
f
t
c
Off-voltage Rise Time
Fall Time
Cross-over Time
V
DD
= 40 V I
D
= 19 A
R
G
= 47
V
GS
= 5 V
(see test circuit, figure 5)
50
95
165
70
135
230
ns
ns
ns
SOURCE DRAIN DIODE
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
I
SD
I
SDM
(
)
Source-drain Current
Source-drain Current
(pulsed)
Forward On Voltage
19
76
A
A
V
SD
(
)
t
rr
I
SD
= 19 A V
GS
= 0
I
SD
= 19 A di/dt = 100 A/
μ
s
V
DD
= 30 V T
j
= 150
o
C
(see test circuit, figure 5)
1.6
V
Q
rr
I
RRM
Reverse Recovery
Time
Reverse Recovery
Charge
Reverse Recovery
Current
60
0.13
4.6
ns
μ
C
A
(
) Pulsed: Pulse duration = 300
μ
s, duty cycle 1.5 %
(
) Pulse width limited by safe operating area
STP19N06L/FI
3/7
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