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參數(shù)資料
| 型號： | STP11NM60N |
| 廠商： | 意法半導體 |
| 英文描述： | N-channel 600V-0.37ohm-10A-TO-220-TO-220FP- IPAK-DPAK Second generation MDmesh Power MOSFET |
| 中文描述： | N溝道600V的0.37ohm - 10A條至220至220FP -像是iPak - DPAK封裝第二代MDmesh功率MOSFET |
| 文件頁數(shù)： | 1/17頁 |
| 文件大?。?/td> | 456K |
| 代理商： | STP11NM60N |
November 2006
Rev 2
1/17
17
STD11NM60N - STD11NM60N-1
STP11NM60N - STF11NM60N
N-channel 600V - 0.37
- 10A - TO-220 - TO-220FP- IPAK - DPAK
Second generation MDmesh Power MOSFET
General features
■
100% avalanche tested
■
Low input capacitance and gate charge
■
Low gate input resistancel
Description
This series of devices is realized with the second
generation of MDmesh Technology. This
revolutionary Power MOSFET associates a new
vertical structure to the Company’s strip layout to
yield one of the world’s lowest on-resistance and
gate charge. It is therefore suitable for the most
demanding high efficiency converters
Applications
■
Switching application
Internal schematic diagram
Type
V
DSS
(@Tjmax)
R
DS(on)
I
D
STD11NM60N
650V
<0.45
<0.45
<0.45
<0.45
10A
STD11NM60N-1
650V
10A
10A
(1)
STF11NM60N
650V
1.
Limited only by maximum temperature allowed
STP11NM60N
650V
10A
TO-220
TO-220FP
DPAK
IPAK
1
2
3
1
2
3
1
3
3
2
1
www.st.com
Order codes
Part number
Marking
Package
Packaging
STD11NM60N-1
D11NM60N
IPAK
Tube
STD11NM60N
D11NM60N
DPAK
Tape & reel
STP11NM60N
P11NM60N
TO-220
Tube
STF11NM60N
F11NM60N
TO-220FP
Tube
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| STP11NM60ND | 功能描述:MOSFET N-channel 600V, 10A FDMesh II RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| STP11NM65N | 功能描述:MOSFET N-Channel 650V Pwr Mosfet RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| STP11NM80 | 功能描述:MOSFET N-Ch 800 Volt 11 Amp Power MDmesh RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| STP11NM80_10 | 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:N-channel 800 V, 0.35 Ω, 11 A MDmesh? Power MOSFET TO-220, TO-220FP, D2PAK, TO-247 |
| STP1201PGM | 制造商:Ferraz Shawmut 功能描述: |
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