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參數(shù)資料
| 型號： | STD12N05 |
| 廠商： | 意法半導體 |
| 英文描述： | N-Channel Enhancement Mode Power MOS Transistor(N溝道增強模式功率MOSFET) |
| 中文描述： | N溝道增強模式功率MOS晶體管（不適用溝道增強模式功率MOSFET的） |
| 文件頁數(shù)： | 1/10頁 |
| 文件大?。?/td> | 177K |
| 代理商： | STD12N05 |
STD12N05
STD12N06
N - CHANNEL ENHANCEMENT MODE
POWER MOS TRANSISTOR
I
TYPICAL R
DS(on)
= 0.1
I
AVALANCHE RUGGED TECHNOLOGY
I
100% AVALANCHE TESTED
I
REPETITIVE AVALANCHE DATA AT 100
o
C
I
LOW GATE CHARGE
I
HIGH CURRENT CAPABILITY
I
175
o
C OPERATING TEMPERATURE
I
APPLICATION ORIENTED
CHARACTERIZATION
I
THROUGH-HOLE IPAK (TO-251) POWER
PACKAGE IN TUBE (SUFFIX ”-1”)
I
SURFACE-MOUNTING DPAK (TO-252)
POWER PACKAGE IN TAPE & REEL
(SUFFIX ”T4”)
APPLICATIONS
I
HIGH CURRENT, HIGH SPEED SWITCHING
I
SOLENOID AND RELAY DRIVERS
I
REGULATORS
I
DC-DC & DC-AC CONVERTERS
I
MOTOR CONTROL, AUDIO AMPLIFIERS
I
AUTOMOTIVE ENVIRONMENT (INJECTION,
ABS, AIR-BAG, LAMPDRIVERS, Etc.)
INTERNAL SCHEMATIC DIAGRAM
December 1996
TYPE
V
DSS
R
DS(on)
< 0.15
< 0.15
I
D
STD12N05
50 V
12 A
STD12N06
60 V
12 A
ABSOLUTE MAXIMUM RATINGS
Symbol
Parameter
Value
Unit
STD12N05
STD12N06
V
DS
Drain-source Voltage (V
GS
= 0)
Drain- gate Voltage (R
GS
= 20 k
)
Gate-source Voltage
Drain Current (continuous) at T
c
= 25
o
C
Drain Current (continuous) at T
c
= 100
o
C
50
60
V
V
DGR
50
60
V
V
GS
±
20
12
V
I
D
A
I
D
8
A
I
DM
(
)
P
tot
Drain Current (pulsed)
Total Dissipation at T
c
= 25
o
C
48
A
45
W
Derating Factor
0.3
W/
o
C
o
C
o
C
T
stg
Storage Temperature
-65 to 175
T
j
Max. Operating Junction Temperature
(
) Pulsewidth limited by safe operating area
175
1
3
2
IPAK
TO-251
(Suffix ”-1”)
1
3
DPAK
TO-252
(Suffix ”T4”)
1/10
相關PDF資料 |
PDF描述 |
|---|---|
| STD12N06 | N-Channel Enhancement Mode Power MOS Transistor(N溝道增強模式功率MOSFET) |
| STD12NE06 | N-Channel 60V-0.08Ω-12A- DPAK SINGLE FEATURE SIZETM Power MOSFET(N溝道功率MOSFET) |
| STD150NH02L | N-CHANNEL 24V - 0.003 ohm - 150A ClipPAK⑩/IPAK STripFET⑩ III POWER MOSFET |
| STD16NE10 | N-Channel 100V-0.07Ω-16A- IPAK/DPAK STripFETTM MOSFET(N溝道MOSFET) |
| STD16NF06 | N-CHANNEL 60V - 0.060 OHM- 16A DPAK/IPAK STripFET TM II POWER MOSFET |
相關代理商/技術參數(shù) |
參數(shù)描述 |
|---|---|
| STD12N05-1 | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | MOSFET | N-CHANNEL | 50V V(BR)DSS | 12A I(D) | TO-251 |
| STD12N05L | 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:N - CHANNEL ENHANCEMENT MODE LOW THRESHOLD POWER MOS TRANSISTOR |
| STD12N05L-1 | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | MOSFET | N-CHANNEL | 50V V(BR)DSS | 12A I(D) | TO-251 |
| STD12N05LT4 | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | MOSFET | N-CHANNEL | 50V V(BR)DSS | 12A I(D) | TO-252 |
| STD12N05T4 | 功能描述:MOSFET N-Ch 50 Volt 12 Amp RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
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