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參數(shù)資料
| 型號(hào)： | STD16NE10 |
| 廠商： | 意法半導(dǎo)體 |
| 英文描述： | N-Channel 100V-0.07Ω-16A- IPAK/DPAK STripFETTM MOSFET(N溝道MOSFET) |
| 中文描述： | N溝道100V的-0.07Ω- 16A條，像是iPak / DPAK封裝STripFETTM MOSFET的（不適用溝道MOSFET的） |
| 文件頁(yè)數(shù)： | 1/9頁(yè) |
| 文件大?。?/td> | 89K |
| 代理商： | STD16NE10 |
STD16NE10
N - CHANNEL 100V - 0.07
- 16A - IPAK/DPAK
STripFET
MOSFET
I
TYPICAL R
DS(on)
= 0.07
I
EXCEPTIONAL dv/dt CAPABILITY
I
AVALANCHERUGGED TECHNOLOGY
I
100% AVALANCHE TESTED
I
APPLICATION ORIENTED
CHARACTERIZATION
I
THROUG-HOLE IPAK (TO-251) POWER
PACKAGEIN TUBE(SUFFIX ”-1”)
I
SURFACE-MOUNTING DPAK (TO-252)
POWERPACKAGE IN TAPE & REEL
(SUFFIX ”T4”)
DESCRIPTION
This Power MOSFET is the latestdevelopment of
SGS-THOMSON unique ”Single Feature Size
”
strip-based
process.The
shows extremely high packing density for low on-
resistance, rugged avalanche characteristics and
less critical alignment steps therefore a remark-
able manufacturingreproducibility.
resulting
transistor
APPLICATIONS
I
DC MOTORCONTROL (DISK DRIVERS,etc.)
I
DC-DC & DC-ACCONVERTERS
I
SYNCHRONOUS RECTIFICATION
INTERNAL SCHEMATIC DIAGRAM
ABSOLUTE MAXIMUM RATINGS
Symbol
Parameter
Value
Unit
V
DS
Drain-source Voltage (V
GS
= 0)
100
V
V
DGR
Drain- gate Voltage (R
GS
= 20 k
)
Gate-source Voltage
Drain Current (continuous) at T
c
= 25
o
C
Drain Current (continuous) at T
c
= 100
o
C
100
V
V
GS
±
20
V
I
D
16
A
I
D
11
A
I
DM
(
)
Drain Current (pulsed)
Total Dissipation at T
c
= 25
o
C
64
A
P
tot
50
W
Derating Factor
0.33
W/
o
C
dv/dt(
1
)
Peak Diode Recovery voltage slope
7
V/ns
o
C
o
C
T
stg
Storage Temperature
-65 to 175
T
j
Max. Operating Junction Temperature
(
) Pulse width limitedby safe operating area
July 1998
175
(
1
) I
SD
≤
16 A,di/dt
≤
200 A/
μ
s, V
DD
≤
V
(BR)DSS
, T
j
≤
T
JMAX
TYPE
V
DSS
R
DS(on)
< 0.1
I
D
STD16NE10
100 V
16 A
3
2
1
IPAK
TO-251
(Suffix”-1”)
1
3
DPAK
TO-252
(Suffix ”T4”)
1/9
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| STD16NF06 | N-CHANNEL 60V - 0.060 OHM- 16A DPAK/IPAK STripFET TM II POWER MOSFET |
| STD17N05 | N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR |
| STD17NE03LT4 | TRANSISTOR | MOSFET | N-CHANNEL | 30V V(BR)DSS | 17A I(D) | TO-252AA |
| STD17NE03L | N - CHANNEL 30V - 0.034ohm - 17A - DPAK/IPAK STripFET POWER MOSFET |
| STD17NE03L-1 | TRANSISTOR | MOSFET | N-CHANNEL | 30V V(BR)DSS | 17A I(D) | TO-251AA |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| STD16NE10-1 | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | MOSFET | N-CHANNEL | 100V V(BR)DSS | 16A I(D) | TO-251AA |
| STD16NE10L | 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:N - CHANNEL 100V - 0.07 ohm - 16A DPAK STripFET POWER MOSFET |
| STD16NE10LT4 | 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:N - CHANNEL 100V - 0.07 ohm - 16A DPAK STripFET POWER MOSFET |
| STD16NE10T4 | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | MOSFET | N-CHANNEL | 100V V(BR)DSS | 16A I(D) | TO-252AA |
| STD16NF06 | 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:N-Channel 60V - 0.060?? - 16A - DPAK STripFETa?￠ II Power MOSFET |
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