- 您現(xiàn)在的位置：買賣IC網(wǎng) > PDF目錄381109 > STD17NE03L-1 (意法半導(dǎo)體) TRANSISTOR | MOSFET | N-CHANNEL | 30V V(BR)DSS | 17A I(D) | TO-251AA PDF資料下載
參數(shù)資料
| 型號： | STD17NE03L-1 |
| 廠商： | 意法半導(dǎo)體 |
| 英文描述： | TRANSISTOR | MOSFET | N-CHANNEL | 30V V(BR)DSS | 17A I(D) | TO-251AA |
| 中文描述： | 晶體管| MOSFET的| N溝道| 30V的五（巴西）直| 17A條（?。﹟對251AA |
| 文件頁數(shù)： | 1/9頁 |
| 文件大?。?/td> | 92K |
| 代理商： | STD17NE03L-1 |
STD17NE03L
N - CHANNEL 30V - 0.034
- 17A - DPAK/IPAK
STripFET
POWER MOSFET
I
TYPICAL R
DS(on)
= 0.034
I
EXCEPTIONAL dv/dtCAPABILITY
I
100%AVALANCHE TESTED
I
APPLICATIONORIENTED
CHARACTERIZATION
I
ADD SUFFIX”T4” FORORDERING IN TAPE
& REEL
DESCRIPTION
This Power MOSFET is the latest developmentof
STMicroelectronics
unique
Size
” strip-based process. The resulting tran-
sistor shows extremely high packing density for
low on-resistance, rugged avalanche charac-
teristics and less criticalalignment steps therefore
a remarkablemanufacturingreproducibility.
”Single
Feature
APPLICATIONS
I
SOLENOID AND RELAYDRIVERS
I
MOTOR CONTROL, AUDIO AMPLIFIERS
I
DC-DC CONVERTERS
I
AUTOMOTIVE ENVIRONMENT
INTERNAL SCHEMATIC DIAGRAM
ABSOLUTE MAXIMUM RATINGS
Symbol
Parameter
Value
Unit
V
DS
V
DGR
V
GS
Drain-source Voltage (V
GS
= 0)
30
V
Drain- gate Voltage (R
GS
= 20 k
)
Gate-source Voltage
Drain Current (continuous) at T
c
= 25
o
C
Drain Current (continuous) at T
c
= 100
o
C
Drain Current (pulsed)
Total Dissipation at T
c
= 25
o
C
Derating Factor
30
V
±
20
17
V
I
D
A
I
D
12
A
I
DM
(
)
P
tot
68
A
35
W
0.23
W/
o
C
dv/dt
Peak Diode Recovery voltage slope
6
V/ns
o
C
o
C
T
stg
T
j
Storage Temperature
-65 to 175
Max. Operating Junction Temperature
(
) Pulse width limited by safe operating area
175
(
1
) I
SD
≤
17 A, di/dt
≤
300 A/
μ
s, V
DD
≤
V
(BR)DSS
, T
j
≤
T
JMAX
TYPE
V
DSS
R
DS(on)
< 0.05
I
D
STD17NE03L
30 V
17 A
June 1999
1
3
DPAK
TO-252
(Suffix ”T4”)
3
2
1
IPAK
TO-251
(Suffix”-1”)
1/9
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| STD1802T4 | LOW VOLTAGE FAST-SWITCHING NPN POWER TRANSISTOR |
| STD1802 | LOW VOLTAGE FAST-SWITCHING NPN POWER TRANSISTOR |
| STD1HNC60-1 | N-CHANNEL 600V 4 OHM 2A DPAK/IPAK POWERMESH II MOSFET |
| STD1HNC60 | N-CHANNEL 600V - 4ohm - 2A - IPAK/DPAK PowerMesh⑩II MOSFET |
| STD1LNC60-1 | N-CHANNEL 600V 12 OHM 1A DPAK/IPAK POWERMESH II MOSFET |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| STD17NE03LT4 | 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:TRANSISTOR | MOSFET | N-CHANNEL | 30V V(BR)DSS | 17A I(D) | TO-252AA |
| STD17NF03 | 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:N-CHANNEL 30V - 0.038ohm - 17A - DPAK/IPAK STripFET⑩ POWER MOSFET |
| STD17NF03L | 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:N-CHANNEL 30V - 0.038 - 17A - DPAK/IPAK STripFETII MOSFET |
| STD17NF03L_07 | 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:N-channel 30V - 0.038ohm - 17A - DPAK/IPAK STripFET TM II Power MOSFET |
| STD17NF03L-1 | 功能描述:MOSFET N-Ch, 30V-0.038ohms 17A RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
發(fā)布緊急采購，3分鐘左右您將得到回復(fù)。