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參數(shù)資料
| 型號(hào)： | STD1LNC60-1 |
| 廠商： | 意法半導(dǎo)體 |
| 英文描述： | N-CHANNEL 600V 12 OHM 1A DPAK/IPAK POWERMESH II MOSFET |
| 中文描述： | N溝道600V的12歐姆1A條的DPAK /像是iPak POWERMESH二MOSFET的 |
| 文件頁(yè)數(shù)： | 1/9頁(yè) |
| 文件大?。?/td> | 274K |
| 代理商： | STD1LNC60-1 |
1/9
February 2001
STD1LNC60
N-CHANNEL 600V - 12
- 1A - IPAK/DPAK
PowerMESHII MOSFET
I
TYPICAL R
DS
(on) = 12
I
EXTREMELY HIGH dv/dt CAPABILITY
I
100% AVALANCHE TESTED
I
NEW HIGH VOLTAGE BENCHMARK
I
GATE CHARGE MINIMIZED
DESCRIPTION
The PowerMESH
II is
the evolution of the first
generation of MESH OVERLAY
.
The layout re-
finements introduced greatly improve the Ron*area
figure of merit while keeping the device at the lead-
ing edge for what concerns swithing speed, gate
charge and ruggedness.
APPLICATIONS
I
HIGH CURRENT, HIGH SPEED SWITCHING
I
SWITH MODE POWER SUPPLIES (SMPS)
I
BATTER CHARGER, ADAPTOR AND STAND-
BY POWER SUPPLY
ABSOLUTE MAXIMUM RATINGS
Symbol
V
DS
Drain-source Voltage (V
GS
= 0)
V
DGR
Drain-gate Voltage (R
GS
= 20 k
)
V
GS
Gate- source Voltage
I
D
Drain Current (continuos) at T
C
= 25°C
I
D
Drain Current (continuos) at T
C
= 100°C
I
DM
(
G
)
Drain Current (pulsed)
P
TOT
Total Dissipation at T
C
= 25°C
Derating Factor
dv/dt(1)
Peak Diode Recovery voltage slope
T
stg
Storage Temperature
T
j
Max. Operating Junction Temperature
()Pulse width limited by safe operating area
TYPE
V
DSS
R
DS(on)
I
D
STD1LNC60
600 V
< 15
1 A
Parameter
Value
Unit
600
V
600
V
± 30
V
1
A
0.63
A
4
A
30
W
0.24
3.5
W/°C
V/ns
–65 to 150
°C
150
°C
(1)I
SD
≤
1A, di/dt
≤
100A/μs, V
DD
≤
V
(BR)DSS
, T
j
≤
T
JMAX
IPAK
TO-251
3
2
1
1
3
DPAK
TO-252
INTERNAL SCHEMATIC DIAGRAM
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| STD1LNC60 | N-CHANNEL 600V - 12ohm - 1A - IPAK/DPAK PowerMESH⑩II MOSFET |
| STD1NA60 | N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR |
| STD1NB50-1 | TRANSISTOR MOSFET D-PAK |
| STD1NK80Z | N-CHANNEL 800V - 13 ヘ - 1 A TO-92 /SOT-223/DPAK/IPAK Zener - Protected SuperMESH⑩ MOSFET |
| STD1NK80Z-1 | N-CHANNEL 800V - 13 ヘ - 1 A TO-92 /SOT-223/DPAK/IPAK Zener - Protected SuperMESH⑩ MOSFET |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| STD1LNK60Z-1 | 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:N-channel 600V - 13Ω - 0.8A - TO-92 - TO-251 - SOT-223 Zener-Protected SuperMESH? Power MOSFET |
| STD1LNK60Z-1_06 | 制造商:MICROSEMI 制造商全稱:Microsemi Corporation 功能描述:N-CHANNEL 600V 13 OHM 0.8A TO-92/IPAK/SOT-223 Zener-Protected SuperMESH MOSFET |
| STD1NA60 | 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR |
| STD1NA60-1 | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | MOSFET | N-CHANNEL | 600V V(BR)DSS | 1.6A I(D) | TO-251 |
| STD1NA60T4 | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | MOSFET | N-CHANNEL | 600V V(BR)DSS | 1.6A I(D) | TO-252AA |
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