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參數(shù)資料
| 型號： | STD1NB50-1 |
| 廠商： | 意法半導(dǎo)體 |
| 英文描述： | TRANSISTOR MOSFET D-PAK |
| 中文描述： | 晶體管MOSFET的的D - Pak |
| 文件頁數(shù)： | 1/8頁 |
| 文件大?。?/td> | 87K |
| 代理商： | STD1NB50-1 |
STD1NB50
N - CHANNEL 500V - 7.5
- 1.4A IPAK
PowerMESH
MOSFET
I
TYPICAL R
DS(on)
= 7.5
I
EXTREMELYHIGH dv/dt CAPABILITY
I
100%AVALANCHE TESTED
I
VERY LOW INTRINSIC CAPACITANCES
I
GATE CHARGE MINIMIZED
I
FOR SMD DPAK VERSIONCONTACT
SALESOFFICE
DESCRIPTION
Using the latest high voltage MESH OVERLAY
process, STMicroelectronics has designed an
advanced family
of
power
outstanding performances.
pending strip layout coupled with the Company’s
proprietary edge termination structure, gives the
lowest R
DS(on)
per area, exceptional avalanche
and dv/dt capabilities and unrivalled gate charge
and switching characteristics.
MOSFETs
The
new
with
patent
APPLICATIONS
I
SWITCH MODE POWERSUPPLIES(SMPS)
I
DC-AC CONVERTERS FOR WELDING
EQUIPMENT AND UNINTERRUPTIBLE
POWERSUPPLIES AND MOTOR DRIVE
INTERNAL SCHEMATIC DIAGRAM
March 2000
ABSOLUTE MAXIMUM RATINGS
Symbol
Parameter
Value
Unit
V
DS
V
DGR
Drain-source Voltage (V
GS
= 0)
Drain- gate Voltage (R
GS
= 20 k
)
Gate-source Voltage
Drain Current (continuous) at T
c
= 25
o
C
Drain Current (continuous) at T
c
= 100
o
C
Drain Current (pulsed)
Total Dissipation at T
c
= 25
o
C
Derating Factor
500
V
500
V
V
GS
I
D
±
36
1.4
V
A
I
D
0.91
A
I
DM
(
)
P
tot
5.6
A
45
W
0.36
W/
o
C
dv/dt(
1
)
Peak Diode Recovery voltage slope
3.5
V/ns
o
C
o
C
T
stg
Storage Temperature
-65 to 150
T
j
Max. Operating Junction Temperature
(
) Pulse width limited by safe operating area
150
(
1
) I
SD
≤
1.4A,di/dt
≤
150 A/
μ
s, V
DD
≤
V
(BR)DSS
, Tj
≤
T
JMAX
TYPE
V
DSS
R
DS(on)
< 9
I
D
STD1NB50
500V
1.4 A
3
2
1
IPAK
TO-251
(Suffix ”-1”)
1/8
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| STD1NB60 | 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:N - CHANNEL 600V - 7.4ohm - 1A - IPAK/DPAK PowerMESH MOSFET |
| STD1NB60-1 | 功能描述:MOSFET N-CH 600V 1A RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| STD1NB60T4 | 功能描述:MOSFET N-CH 600V 1A RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| STD1NB80 | 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:N - CHANNEL 800V - 16ohm - 1A - DPAK/IPAK PowerMESH MOSFET |
| STD1NB80- | 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:N - CHANNEL 800V - 16ohm - 1A - IPAK PowerMESH MOSFET |
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