參數(shù)資料
型號： STD1HNC60-1
廠商： 意法半導(dǎo)體
英文描述： N-CHANNEL 600V 4 OHM 2A DPAK/IPAK POWERMESH II MOSFET
中文描述： N溝道600V的4歐姆甲的DPAK /像是iPak POWERMESH二MOSFET的
文件頁數(shù)： 1/9頁
文件大小： 268K
代理商： STD1HNC60-1
1/9
February 2001
STD1HNC60
N-CHANNEL 600V - 4
- 2A - IPAK/DPAK
PowerMeshII MOSFET
I
TYPICAL R
DS
(on) = 4
I
EXTREMELY HIGH dv/dt CAPABILITY
I
100% AVALANCHE TESTED
I
NEW HIGH VOLTAGE BENCHMARK
I
GATE CHARGE MINIMIZED
DESCRIPTION
The PowerMESH
II is
the evolution of the first
generation of MESH OVERLAY
.
The layout re-
finements introduced greatly improve the Ron*area
figure of merit while keeping the device at the lead-
ing edge for what concerns swithing speed, gate
charge and ruggedness.
APPLICATIONS
I
HIGH CURRENT, HIGH SPEED SWITCHING
I
SWITH MODE POWER SUPPLIES (SMPS)
I
DC-AC CONVERTERS FOR WELDING
EQUIPMENT AND UNINTERRUPTIBLE
POWER SUPPLIES AND MOTOR DRIVER
ABSOLUTE MAXIMUM RATINGS
Symbol
V
DS
Drain-source Voltage (V
GS
= 0)
V
DGR
Drain-gate Voltage (R
GS
= 20 k
)
V
GS
Gate- source Voltage
I
D
Drain Current (continuos) at T
C
= 25°C
I
D
Drain Current (continuos) at T
C
= 100°C
I
DM (1)
Drain Current (pulsed)
P
TOT
Total Dissipation at T
C
= 25°C
Derating Factor
dv/dt
Peak Diode Recovery voltage slope
T
stg
Storage Temperature
T
j
Max. Operating Junction Temperature
()Pulse width limited by safe operating area
.
TYPE
V
DSS
R
DS(on)
I
D
STD1HNC60
600 V
< 5
2 A
Parameter
Value
Unit
600
V
600
V
±30
V
2
A
1.3
A
8
A
50
W
0.4
3.5
W/°C
V/ns
–65 to 150
°C
150
°C
(1)I
SD
≤
2A, di/dt
≤
100A/μs, V
DD
≤
V
(BR)DSS
, T
j
≤
T
JMAX
IPAK
TO-251
3
2
1
1
3
DPAK
TO-252
INTERNAL SCHEMATIC DIAGRAM
相關(guān)PDF資料
PDF描述
STD1HNC60 N-CHANNEL 600V - 4ohm - 2A - IPAK/DPAK PowerMesh⑩II MOSFET
STD1LNC60-1 N-CHANNEL 600V 12 OHM 1A DPAK/IPAK POWERMESH II MOSFET
STD1LNC60 N-CHANNEL 600V - 12ohm - 1A - IPAK/DPAK PowerMESH⑩II MOSFET
STD1NA60 N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR
STD1NB50-1 TRANSISTOR MOSFET D-PAK
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
STD1HNC60T4 功能描述:MOSFET N-CH 600V 2A DPAK RoHS:否 類別:分離式半導(dǎo)體產(chǎn)品 >> FET - 單 系列:PowerMESH™ 標準包裝:1,000 系列:MESH OVERLAY™ FET 型:MOSFET N 通道，金屬氧化物 FET 特點:邏輯電平門 漏極至源極電壓(Vdss):200V 電流 - 連續(xù)漏極(Id) @ 25° C:18A 開態(tài)Rds（最大）@ Id, Vgs @ 25° C:180 毫歐 @ 9A，10V Id 時的 Vgs(th)（最大）:4V @ 250µA 閘電荷(Qg) @ Vgs:72nC @ 10V 輸入電容 (Ciss) @ Vds:1560pF @ 25V 功率 - 最大:40W 安裝類型:通孔 封裝/外殼:TO-220-3 整包 供應(yīng)商設(shè)備封裝:TO-220FP 包裝:管件
STD1LNC60 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:N-CHANNEL 600V - 12ohm - 1A - IPAK/DPAK PowerMESH⑩II MOSFET
STD1LNC60-1 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:N-CHANNEL 600V 12 OHM 1A DPAK/IPAK POWERMESH II MOSFET
STD1LNK60Z-1 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:N-channel 600V - 13Ω - 0.8A - TO-92 - TO-251 - SOT-223 Zener-Protected SuperMESH? Power MOSFET
STD1LNK60Z-1_06 制造商:MICROSEMI 制造商全稱:Microsemi Corporation 功能描述:N-CHANNEL 600V 13 OHM 0.8A TO-92/IPAK/SOT-223 Zener-Protected SuperMESH MOSFET
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