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參數(shù)資料
| 型號(hào)： | STD1224N |
| 廠商： | SamHop Microelectronics Corp. |
| 英文描述： | N-Channel Enhancement Mode Field Effect Transistor |
| 中文描述： | N溝道增強(qiáng)型場(chǎng)效應(yīng)管 |
| 文件頁(yè)數(shù)： | 1/8頁(yè) |
| 文件大?。?/td> | 939K |
| 代理商： | STD1224N |
24
N-Channel Enhancement Mode Field Effect Transistor
TO-252 and TO-251 Package.
ABSOLUTE MAXIMUM RATINGS (T
A
=25 C unless otherwise noted)
Parameter
Symbol
Limit
Unit
Drain-Source Voltage
V
DS
V
Gate-Source Voltage
V
GS
12
V
Drain Current-Continuous @ T
J
=25 C
-Pulsed
I
D
12
10
50
A
A
A
W
I
DM
Drain-Source Diode Forward Current
I
S
Maximum Power Dissipation
P
D
Operating Junction and Storage
Temperature Range
T
J
, T
STG
-55 to 150
C
a
a
b
SamHop Microelectronics Corp.
Dec 20,2004
1
PRODUCT SUMMARY
V
DSS
I
D
R
DS(ON) ( m
) Max
24V
12A
80 @ V
GS
= 4.5V
130 @ V
GS
= 2.5V
FEATURES
Super high dense cell design for low R
DS(ON
).
Rugged and reliable.
S
G
D
STU SERIES
TO-252AA(D-PAK)
STD SERIES
TO-251(l-PAK)
G
G
S
S
D
D
STU/D1224N
THERMAL CHARACTERISTICS
Thermal Resistance, Junction-to-Case
Thermal Resistance, Junction-to-Ambient
R
JC
3
50
R
JA
/W
C
/W
C
25
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