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| 型號： | STM8AH5199TAU |
| 廠商： | STMICROELECTRONICS |
| 元件分類： | 微控制器/微處理器 |
| 英文描述： | 8-BIT, FLASH, 24 MHz, MICROCONTROLLER, PQFP64 |
| 封裝： | 10 X 10 MM, ROHS COMPLIANT, LQFP-64 |
| 文件頁數(shù)： | 93/112頁 |
| 文件大小： | 2161K |
| 代理商： | STM8AH5199TAU |
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STM8AF61xx, STM8AH61xx, STM8AF51xx, STM8AH51xx
Electrical characteristics
Doc ID 14395 Rev 5
11.3.5
I/O port pin characteristics
General characteristics
Subject to general operating conditions for VDD and TA unless otherwise specified. All
unused pins must be kept at a fixed voltage, using the output mode of the I/O for example or
an external pull-up or pull-down resistor.
Table 51.
I/O static characteristics
Symbol
Parameter
Conditions
Min
Typ
Max
Unit
VIL
Low-level input voltage
—
-0.3 V
0.3 x VDD
—
VIH
High-level input voltage
0.7 x VDD
VDD + 0.3 V
Vhys
Hysteresis(1)
—
0.1 x
VDD
—
VOH
High-level output voltage
Standard I/0, VDD = 5 V,
I = 3 mA
VDD - 0.5 V
—
Standard I/0, VDD = 3 V,
I = 1.5 mA
VDD - 0.4 V
—
VOL
Low-level output voltage
High sink and true open
drain I/0, VDD = 5 V
I = 8 mA
——
0.5
V
Standard I/0, VDD = 5 V
I = 3 mA
——
0.6
Standard I/0, VDD = 3 V
I = 1.5 mA
——
0.4
Rpu
Pull-up resistor
VDD = 5 V, VIN = VSS
35
50
65
k
Ω
tR, tF
Rise and fall time
(10% - 90%)
Fast I/Os
Load = 50 pF
——
20(2)
ns
Standard and high sink I/Os
Load = 50 pF
—
Ilkg
Digital input pad leakage
current
VSS ≤ VIN ≤ VDD
——
±1
A
Ilkg ana
Analog input pad leakage
current
VSS ≤ VIN ≤ VDD
-40 °C < TA < 125 °C
—
±250
nA
VSS ≤ VIN ≤ VDD
-40 °C < TA < 145 °C
—
±500
Ilkg(inj)
Leakage current in
adjacent I/O(2)
Injection current ±4 mA
—
±1(2)
A
IDDIO
Total current on either
VDDIO or VSSIO
Including injection currents
—
60
mA
1.
Hysteresis voltage between Schmitt trigger switching levels. Based on characterization results, not tested in production.
2.
Data based on characterization results, not tested in production.
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