參數(shù)資料
型號: STM8AH5199TAU
廠商: STMICROELECTRONICS
元件分類: 微控制器/微處理器
英文描述: 8-BIT, FLASH, 24 MHz, MICROCONTROLLER, PQFP64
封裝: 10 X 10 MM, ROHS COMPLIANT, LQFP-64
文件頁數(shù): 105/112頁
文件大?。?/td> 2161K
代理商: STM8AH5199TAU
Electrical characteristics
STM8AF61xx, STM8AH61xx, STM8AF51xx, STM8AH51xx
Doc ID 14395 Rev 5
Figure 44. ADC accuracy characteristics
1.
Example of an actual transfer curve
2.
The ideal transfer curve
3.
End point correlation line
ET = Total unadjusted error: Maximum deviation between the actual and the ideal transfer curves.
EO = Offset error: Deviation between the first actual transition and the first ideal one.
EG = Gain error: Deviation between the last ideal transition and the last actual one.
ED = Differential linearity error: Maximum deviation between actual steps and the ideal one.
EL = Integral linearity error: Maximum deviation between any actual transition and the end point correlation
line.
Table 57.
ADC accuracy for VDDA = 5 V
Symbol
Parameter
Conditions
Typ
Max(1)
1.
Max value is based on characterization, not tested in production.
Unit
|ET|
Total unadjusted error(2)
2.
ADC accuracy vs. injection current: Any positive or negative injection current within the limits specified for
IINJ(PIN) and ΣIINJ(PIN) in Section 11.3.5 does not affect the ADC accuracy.
fADC = 2 MHz
1.4
3(3)
3.
TUE 2LSB can be reached on specific salestypes in the whole temperature range.
LSB
|EO|
Offset error(2)
0.8
3
|EG|
Gain error(2)
0.1
2
|ED|
Differential linearity error(2)
0.9
1
|EL|
Integral linearity error(2)
0.7
1.5
|ET|
Total unadjusted error(2)
fADC = 4 MHz
1.9(4)
4.
Target values.
|EO|
Offset error(2)
|EG|
Gain error(2)
|ED|
Differential linearity error(2)
|EL|
Integral linearity error(2)
EO
EG
1LSBIDEAL
1LSB
IDEAL
V
DDA
V
SSA
1024
-----------------------------------------
=
1023
1022
1021
5
4
3
2
1
0
7
6
1
2
34
567
1021102210231024
(1)
(2)
ET
ED
EL
(3)
VDDA
VSSA
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