參數(shù)資料
型號： STGW30NC60W
廠商： 意法半導體
英文描述： N-CHANNEL 30A - 600V - TO-247 Ultra FAST Switching PowerMESH IGBT
中文描述： N溝道30A條- 600V的-到247超快速IGBT的開關PowerMESH
文件頁數(shù)： 1/9頁
文件大小： 98K
代理商： STGW30NC60W
Target Specification
Rev 1
1/9
September 2005
9
This is a preliminary information on a new product foreseen to be developed. Details are subject to change without notice
STGW30NC60W
N-CHANNEL 30A - 600V - TO-247
Ultra FAST Switching PowerMESH IGBT
General features
■
VERY LOW OFF LOSSES INCLUDING TAIL
CURRENT
■
LOWER C
RES
/ C
IES
RATIO
■
LOSSES INCLUDE DIODE RECOVERY
ENERGY
■
HIGH FREQUENCY OPERATION
■
VERY SOFT ULTRA FAST RECOVERY ANTI
PARALLEL DIODE
Description
Using the latest high voltage technology based on
a patented strip layout, STMicroelectronics has
designed an advanced family of IGBTs, the
PowerMESH
IGBTs,
performances. The suffix “W” identifies a family
optimized for very high frequency application.
with
outstanding
Applications
■
HIGH FREQUENCY INVERTERS, UPS,
MOTOR DRIVERS
■
HF, SMPS and PFC IN BOTH HARD SWITCH
AND RESONANT TOPOLOGIES
Order codes
Package
Internal schematic diagram
Type
V
CES
V
CE(sat)
(Max)@ 25°C
I
C
@100°C
STGW30NC60W
600 V
< 2.5 V
30 A
1
2
3
TO-247
Sales Type
Marking
Package
Packaging
STGW30NC60W
W30NC60W
TO-247
TUBE
相關PDF資料
PDF描述
STH15NB50 N-CHANNEL ENHANCEMENT MODE MESH OVERLAY POWER MOSFET
STH15NA50FI N - CHANNEL ENHANCEMENT MODE FAST POWER MOS TRANSISTOR
STH16NA40 N - CHANNEL 400V - 0.21ohm - 16A - TO-247/ISOWATT218 POWER MOS TRANSISTORS
STH6NA80FI N-Channel 800V-1.8Ω-5.4A - TO-247/ISOWATT218 Fast Power MOS Transistor(N溝道快速功率MOSFET)
STW6NA80 N-Channel 800V-1.8Ω-5.4A - TO-247/ISOWATT218 Fast Power MOS Transistor(N溝道快速功率MOSFET)
相關代理商/技術參數(shù)
參數(shù)描述
STGW30NC60WD 功能描述:IGBT 晶體管 PowerMESH" IGBT RoHS:否 制造商:Fairchild Semiconductor 配置: 集電極—發(fā)射極最大電壓 VCEO:650 V 集電極—射極飽和電壓:2.3 V 柵極/發(fā)射極最大電壓:20 V 在25 C的連續(xù)集電極電流:150 A 柵極—射極漏泄電流:400 nA 功率耗散:187 W 最大工作溫度: 封裝 / 箱體:TO-247 封裝:Tube
STGW30NC60WD_07 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:N-channel 30A - 600V - TO-247 Ultra fast switching PowerMESH⑩ IGBT
STGW30V60DF 制造商:STMicroelectronics 功能描述:IGBT & POWER BIPOLAR - Rail/Tube 制造商:STMicroelectronics 功能描述:IGBT 600V 60A TO-247 制造商:STMicroelectronics 功能描述:600V 30A High Speed Trench Gate IGBT
STGW30V60F 制造商:STMicroelectronics 功能描述:IGBT & POWER BIPOLAR - Rail/Tube 制造商:STMicroelectronics 功能描述:IGBT & Power Bipolar
STGW33IH120D 功能描述:IGBT 晶體管 30 A - 1200 V Very Fast IGBT RoHS:否 制造商:Fairchild Semiconductor 配置: 集電極—發(fā)射極最大電壓 VCEO:650 V 集電極—射極飽和電壓:2.3 V 柵極/發(fā)射極最大電壓:20 V 在25 C的連續(xù)集電極電流:150 A 柵極—射極漏泄電流:400 nA 功率耗散:187 W 最大工作溫度: 封裝 / 箱體:TO-247 封裝:Tube
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