參數資料
型號: STH6NA80FI
廠商: 意法半導體
英文描述: N-Channel 800V-1.8Ω-5.4A - TO-247/ISOWATT218 Fast Power MOS Transistor(N溝道快速功率MOSFET)
中文描述: N溝道800V的-1.8Ω- 5.4A - TO-247/ISOWATT218快速功率MOS晶體管(不適用溝道快速功率MOSFET的)
文件頁數: 1/10頁
文件大?。?/td> 138K
代理商: STH6NA80FI
STW6NA80
STH6NA80FI
N - CHANNEL 800V - 1.8
- 5.4A - TO-247/ISOWATT218
FAST POWER MOS TRANSISTOR
I
TYPICAL R
DS(on)
= 1.8
I
AVALANCERUGGED TECHNOLOGY
I
100%AVALANCHE TESTED
I
REPETITIVEAVALANCHE DATA AT 100
o
C
I
LOW GATE CHARGE
I
VERY HIGH CURRENT CAPABILITY
I
APPLICATIONORIENTED
CHARACTERIZATION
APPLICATIONS
I
HIGH CURRENT, HIGH SPEED SWITCHING
I
SOLENOID AND RELAYDRIVERS
I
REGULATORS
I
DC-DC & DC-AC CONVERTERS
I
MOTOR CONTROL, AUDIO AMPLIFIERS
I
AUTOMOTIVE ENVIRONMENT (INJECTION,
ABS, AIR-BAG, LAMPDRIVERS, Etc.)
INTERNAL SCHEMATIC DIAGRAM
ABSOLUTE MAXIMUM RATINGS
Symbol
Parameter
Value
Unit
STW6NA80
STH6NA80FI
V
DS
V
DGR
Drain-source Voltage (V
GS
= 0)
800
V
Drain- gate Voltage (R
GS
= 20 k
)
Gate-source Voltage
Drain Current (continuous) at T
c
= 25
o
C
Drain Current (continuous) at T
c
= 100
o
C
800
V
V
GS
±
30
V
I
D
I
D
5.4
3.4
A
3.4
2.1
A
I
DM
(
)
P
tot
Drain Current (pulsed)
Total Dissipation at T
c
= 25
o
C
Derating Factor
22
22
A
150
60
W
1.2
0.48
4000
W/
o
C
V
ISO
T
stg
T
j
Insulation Withstand Voltage (DC)
V
Storage Temperature
-65 to 150
o
C
o
C
Max. Operating Junction Temperature
(
) Pulse width limited by safe operating area
150
TYPE
V
DSS
R
DS(on)
< 2.2
< 2.2
I
D
STW6NA80
STH6NA80FI
800 V
800 V
5.4 A
3.4 A
October 1998
1
2
3
TO-247
ISOWATT218
1
2
3
1/10
相關PDF資料
PDF描述
STW6NA80 N-Channel 800V-1.8Ω-5.4A - TO-247/ISOWATT218 Fast Power MOS Transistor(N溝道快速功率MOSFET)
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