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參數(shù)資料
| 型號： | STW8NB90 |
| 廠商： | 意法半導體 |
| 英文描述： | N-CHANNEL 900V - 1.1 ohm - 8 A TO-247/ISOWATT218 PowerMesh⑩ MOSFET |
| 中文描述： | N溝道900V - 1.1歐姆- 8甲TO-247/ISOWATT218 PowerMesh⑩MOSFET的 |
| 文件頁數(shù)： | 1/9頁 |
| 文件大?。?/td> | 311K |
| 代理商： | STW8NB90 |
1/9
July 2001
STW8NB90
STH8NB90FI
N-CHANNEL 900V - 1.1
- 8 A TO-247/ISOWATT218
PowerMesh MOSFET
I
TYPICAL R
DS
(on) = 1.1
I
EXTREMELY HIGH dv/dt CAPABILITY
I
100% AVALANCHE TESTED
I
VERY LOW INTRINSIC CAPACITANCES
I
GATE CHARGE MINIMIZED
DESCRIPTION
Using the latest high voltage MESH OVERLAY
process, STMicroelectronics has designed an ad-
vanced family of power MOSFETs with outstanding
performances. The new patent pending strip layout
coupled with the Company’s proprieraty edge termi-
nation structure, gives the lowest R
DS(on)
per area,
exceptional avalanche and dv/dt capabilities and
unrivalled gate charge and switching characteris-
tics.
APPLICATIONS
I
HIGH CURRENT, HIGH SPEED SWITCHING
I
SWITH MODE POWER SUPPLIES (SMPS)
I
DC-AC CONVERTERS FOR WELDING
EQUIPMENT
ABSOLUTE MAXIMUM RATINGS
Symbol
()Pulse width limited by safe operating area
(1)I
SD
≤
8 A, di/dt
≤
200A/μs, V
DD
≤
V
(BR)DSS
, T
j
≤
T
JMAX.
TYPE
V
DSS
R
DS(on)
I
D
STW8NB90
900 V
< 1.45
8 A
STH8NB90FI
900 V
< 1.45
5 A
Parameter
Value
Unit
STW8NB90
STH8NB90FI
V
DS
V
DGR
V
GS
I
D
I
D
I
DM
(
G
)
P
TOT
Drain-source Voltage (V
GS
= 0)
Drain-gate Voltage (R
GS
= 20 k
)
900
V
900
V
Gate- source Voltage
±30
V
Drain Current (continuos) at T
C
= 25°C
Drain Current (continuos) at T
C
= 100°C
8
5
A
5
3
A
Drain Current (pulsed)
32
20
A
Total Dissipation at T
C
= 25°C
Derating Factor
Peak Diode Recovery voltage slope
200
80
W
1.6
0.64
W/°C
V/ns
dv/dt (1)
V
ISO
T
stg
T
j
4
Insulation Withstand Voltage (DC)
-
2500
V
Storage Temperature
–65 to 150
°C
Max. Operating Junction Temperature
150
°C
INTERNAL SCHEMATIC DIAGRAM
1
2
3
1
2
3
TO-247
ISOWATT218
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