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參數(shù)資料
| 型號： | STGP3NB60KDFP |
| 廠商： | 意法半導體 |
| 英文描述： | N-CHANNEL 3A - 600V - TO-220/DPAK/D2PAK PowerMESH⑩ IGBT |
| 中文描述： | N溝道3A條- 600V的- IGBT的TO-220/DPAK/D2PAK PowerMESH⑩ |
| 文件頁數(shù)： | 1/8頁 |
| 文件大?。?/td> | 87K |
| 代理商： | STGP3NB60KDFP |
STGP3NB60H
N-CHANNEL 3A - 600V TO-220
PowerMESH
IGBT
I
HIGH INPUT IMPEDANCE
(VOLTAGEDRIVEN)
I
LOW ON-VOLTAGEDROP (V
cesat
)
I
LOW GATE CHARGE
I
HIGH CURRENT CAPABILITY
I
VERY HIGH FREQUENCY OPERATION
I
OFFLOSSES INCLUDE TAIL CURRENT
DESCRIPTION
Using the latest high voltage technology based
on a patented strip layout, STMicroelectronics
has designed an advanced family of IGBTs, the
PowerMESH
IGBTs,
perfomances. The suffix ”H” identifies a family
optimized to achieve very low switching times for
high frequencyapplications(<120kHz).
with
outstanding
APPLICATIONS
I
HIGH FREQUENCY MOTOR CONTROLS
I
SMPSAND PFC IN BOTH HARDSWITCH
AND RESONANTTOPOLOGIES
INTERNAL SCHEMATIC DIAGRAM
ABSOLUTE MAXIMUM RATINGS
Symbol
Parameter
Value
Unit
V
CES
V
ECR
V
GE
I
C
Collector-Emitter Voltage (V
GS
= 0)
Emitter-Collector Voltage
600
V
20
V
Gate-Emitter Voltage
Collector Current (continuous) at T
c
= 25
o
C
Collector Current (continuous) at T
c
= 100
o
C
±
20
6
V
A
I
C
3
A
I
CM
(
)
P
tot
Collector Current (pulsed)
Total Dissipation at T
c
= 25
o
C
Derating Factor
24
A
70
W
0.56
W/
o
C
o
C
o
C
T
stg
Storage Temperature
-65 to 150
T
j
Max. Operating Junction Temperature
(
) Pulse width limited by max. junction temperature
150
TYPE
V
CES
V
CE(sat)
I
C
3 A
STGP3NB60H
600 V
< 2.8 V
June 1999
1
2
3
TO-220
1/8
相關PDF資料 |
PDF描述 |
|---|---|
| STGP3NB60K | N-CHANNEL 3A - 600V - TO-220/DPAK/D2PAK PowerMESH⑩ IGBT |
| STGP3NB60KD | N-CHANNEL 3A - 600V - TO-220/DPAK/D2PAK PowerMESH⑩ IGBT |
| STGP3NB60S | N-CHANNEL 3A - 600V - TO-220 / DPAK PowerMESH⑩ IGBT |
| STGW20NC60VD | N-CHANNEL 30A - 600V TO-247 Very Fast PowerMESH IGBT |
| STGW30NC60W | N-CHANNEL 30A - 600V - TO-247 Ultra FAST Switching PowerMESH IGBT |
相關代理商/技術參數(shù) |
參數(shù)描述 |
|---|---|
| STGP3NB60M | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:N-CHANNEL 600V 3A TO-220/DPAK POWERMESH IGBT |
| STGP3NB60MD | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:N-CHANNEL 600V 3A TO-220/D2PAK POWERMESH IGBT |
| STGP3NB60S | 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:N-CHANNEL 3A - 600V - TO-220 / DPAK PowerMESH⑩ IGBT |
| STGP3NC120HD | 功能描述:IGBT 晶體管 7A 1200 V Very Fast IGBT Power Bipolar RoHS:否 制造商:Fairchild Semiconductor 配置: 集電極—發(fā)射極最大電壓 VCEO:650 V 集電極—射極飽和電壓:2.3 V 柵極/發(fā)射極最大電壓:20 V 在25 C的連續(xù)集電極電流:150 A 柵極—射極漏泄電流:400 nA 功率耗散:187 W 最大工作溫度: 封裝 / 箱體:TO-247 封裝:Tube |
| STGP40V60F | 制造商:STMicroelectronics 功能描述:IGBT & POWER BIPOLAR - Rail/Tube 制造商:STMicroelectronics 功能描述:600 V, 40 A very high speed trench gate field-stop IGBT, TO-220 制造商:STMicroelectronics 功能描述:IGBT & Power Bipolar |
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