參數(shù)資料
型號(hào)： STGP12NB60HD
廠商： 意法半導(dǎo)體
英文描述： N-CHANNEL 12A - 600V TO-220 PowerMESH⑩ IGBT
中文描述： N溝道12A條- 600V到- 220 IGBT的PowerMESH⑩
文件頁(yè)數(shù)： 1/9頁(yè)
文件大?。?/td> 409K
代理商： STGP12NB60HD
1/9
July 2003
STGP12NB60HD
N-CHANNEL 12A - 600V
TO-220
PowerMESH IGBT
I
HIGH INPUT IMPEDANCE
I
LOW ON-VOLTAGE DROP (V
cesat
)
I
OFF LOSSES INCLUDE TAIL CURRENT
I
LOW GATE CHARGE
I
HIGH CURRENT CAPABILITY
I
VERY HIGH FREQUENCY OPERATION
I
CO-PACKAGED WITH TURBOSWITCHT
I
ANTIPARALLEL DIODE
DESCRIPTION
Using the latest high voltage technology based on a
patented strip layout, STMicroelectronics has de-
signed an advanced family of IGBTs, the Power-
MESH IGBTs, with outstanding perfomances.
The suffix "H" identifies a family optimized for high
frequency applications (up to 50kHz)in order to
achieve very high switching performances (reduced
tfall) mantaining a low voltage drop.
APPLICATIONS
I
HIGH FREQUENCY MOTOR CONTROLS
I
SMPS and PFC IN BOTH HARD SWITCH AND
RESONANT TOPOLOGIES
I
UPS
ABSOLUTE MAXIMUM RATINGS
Symbol
V
CES
Collector-Emitter Voltage (V
GS
= 0)
V
ECR
Emitter-Collector Voltage
V
GE
Gate-Emitter Voltage
I
C
Collector Current (continuous) at T
C
= 25°C
I
C
Collector Current (continuous) at T
C
= 100°C
I
CM
( )
Collector Current (pulsed)
P
TOT
Total Dissipation at T
C
= 25°C
Derating Factor
T
stg
Storage Temperature
T
j
Max. Operating Junction Temperature
( )
Pulse width limited by safe operating area
TYPE
V
CES
V
CE(sat)
I
C
STGP12NB60HD
600 V
< 2.8
V
12 A
Parameter
Value
Unit
600
V
20
V
± 20
V
24
A
12
A
96
A
100
W
0.8
W/°C
–65 to 150
°C
150
°C
TO-220
1
2
3
INTERNAL SCHEMATIC DIAGRAM
相關(guān)PDF資料
PDF描述
STGP12NB60KD N-CHANNEL 18A - 600V TO-220/D2PAK SHORT CIRCUIT PROOF PowerMESH IGBT
STGP12NB60H N-CHANNEL 12A - 600V TO-220 PowerMESH IGBT
STGP20NB60H N-Channel 20A-600V- TO-220 PowerMESH IGBT(N溝道絕緣柵雙極晶體管)
STGP20NB60K N-CHANNEL 20A - 600V - TO-220 PowerMesh IGBT
STGP3NB60HD N-CHANNEL 3A - 600V TO-220/FP PowerMESH IGBT
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
STGP12NB60K 功能描述:IGBT 晶體管 N-Ch 600 Volt 18 Amp RoHS:否 制造商:Fairchild Semiconductor 配置: 集電極—發(fā)射極最大電壓 VCEO:650 V 集電極—射極飽和電壓:2.3 V 柵極/發(fā)射極最大電壓:20 V 在25 C的連續(xù)集電極電流:150 A 柵極—射極漏泄電流:400 nA 功率耗散:187 W 最大工作溫度: 封裝 / 箱體:TO-247 封裝:Tube
STGP12NB60KD 功能描述:IGBT 晶體管 N-Ch 600 Volt 18 Amp RoHS:否 制造商:Fairchild Semiconductor 配置: 集電極—發(fā)射極最大電壓 VCEO:650 V 集電極—射極飽和電壓:2.3 V 柵極/發(fā)射極最大電壓:20 V 在25 C的連續(xù)集電極電流:150 A 柵極—射極漏泄電流:400 nA 功率耗散:187 W 最大工作溫度: 封裝 / 箱體:TO-247 封裝:Tube
STGP14N60D 功能描述:IGBT 晶體管 14A 600V SHRT CIR RUGGED IGBT RoHS:否 制造商:Fairchild Semiconductor 配置: 集電極—發(fā)射極最大電壓 VCEO:650 V 集電極—射極飽和電壓:2.3 V 柵極/發(fā)射極最大電壓:20 V 在25 C的連續(xù)集電極電流:150 A 柵極—射極漏泄電流:400 nA 功率耗散:187 W 最大工作溫度: 封裝 / 箱體:TO-247 封裝:Tube
STGP14NC60KD 功能描述:IGBT 晶體管 PowerMESH" IGBT RoHS:否 制造商:Fairchild Semiconductor 配置: 集電極—發(fā)射極最大電壓 VCEO:650 V 集電極—射極飽和電壓:2.3 V 柵極/發(fā)射極最大電壓:20 V 在25 C的連續(xù)集電極電流:150 A 柵極—射極漏泄電流:400 nA 功率耗散:187 W 最大工作溫度: 封裝 / 箱體:TO-247 封裝:Tube
STGP15H60DF 制造商:STMicroelectronics 功能描述:Trench gate field-stop IGBT, H series 600 V, 15 A high speed
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