- 您現(xiàn)在的位置：買賣IC網(wǎng) > PDF目錄381111 > STGP10NB60SFP (意法半導(dǎo)體) N-CHANNEL 10A - 600V - TO-220FP PowerMesh⑩ IGBT PDF資料下載
參數(shù)資料
| 型號： | STGP10NB60SFP |
| 廠商： | 意法半導(dǎo)體 |
| 英文描述： | N-CHANNEL 10A - 600V - TO-220FP PowerMesh⑩ IGBT |
| 中文描述： | N溝道10A條- 600V的-對IGBT的220FP PowerMesh⑩ |
| 文件頁數(shù)： | 1/8頁 |
| 文件大?。?/td> | 326K |
| 代理商： | STGP10NB60SFP |
1/8
November 2002
STGP10NB60SDFP
N-CHANNEL 10A - 600V - TO-220FP
PowerMesh IGBT
(
G
) Pulse width limitedby safe operating area
I
HIGHT INPUT IMPEDANCE (VOLTAGE
DRIVEN)
I
LOW ON-VOLTAGE DROP
I
HIGH CURRENT CAPABILITY
I
OFF LOSSES INCLUDE TAIL CURRENT
DESCRIPTION
Using the latest high voltage technology based on a
patented strip layout, STMicroelectronics has
designed an advanced family of IGBTs, the
PowerMESH
IGBTs, with outstanding
performances. The suffix “S” identifies a family
optimized achieve minimum on-voltage drop for low
frequency applications (<1kHz).
APPLICATIONS
I
LIGHT DIMMER
I
STATIC RELAYS
I
MOTOR CONTROL
ABSOLUTE MAXIMUM RATINGS
Symbol
V
CES
Collector-Emitter Voltage (V
GS
= 0)
V
ECR
Reverse Battery Protection
V
GE
Gate-Emitter Voltage
I
C
Collector Current (continuous) at T
C
= 25°C
I
C
Collector Current (continuous) at T
C
= 100°C
I
CM
( )
Collector Current (pulsed)
P
TOT
Total Dissipation at T
C
= 25°C
Derating Factor
V
ISO
Insulation Withstand Voltage A.C.(t = 1 sec; Tc = 25°C)
T
stg
Storage Temperature
T
j
Max. Operating Junction Temperature
TYPE
V
CES
V
CE(sat)
I
C
STGP10NB60SDFP
600
< 1.8
V
10 A
Parameter
Value
Unit
600
V
20
V
± 20
V
20
A
10
A
80
A
30
W
0.2
W/°C
2500
V
–65 to 150
°C
175
°C
TO-220FP
1
2
3
INTERNAL SCHEMATIC DIAGRAM
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| STGP10NB60S | N-Channel 10A-600V- TO-220 PowerMESHTM IGBT(N溝道絕緣柵雙極晶體管) |
| STGP12NB60HD | N-CHANNEL 12A - 600V TO-220 PowerMESH⑩ IGBT |
| STGP12NB60KD | N-CHANNEL 18A - 600V TO-220/D2PAK SHORT CIRCUIT PROOF PowerMESH IGBT |
| STGP12NB60H | N-CHANNEL 12A - 600V TO-220 PowerMESH IGBT |
| STGP20NB60H | N-Channel 20A-600V- TO-220 PowerMESH IGBT(N溝道絕緣柵雙極晶體管) |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| STGP10NC60H | 功能描述:IGBT 晶體管 PowerMESH TM IGBT RoHS:否 制造商:Fairchild Semiconductor 配置: 集電極—發(fā)射極最大電壓 VCEO:650 V 集電極—射極飽和電壓:2.3 V 柵極/發(fā)射極最大電壓:20 V 在25 C的連續(xù)集電極電流:150 A 柵極—射極漏泄電流:400 nA 功率耗散:187 W 最大工作溫度: 封裝 / 箱體:TO-247 封裝:Tube |
| STGP10NC60H_06 | 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:N-channel 10A - 600V - TO-220 Very fast PowerMESH TM IGBT |
| STGP10NC60H_07 | 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:N-channel 10A - 600V - TO-220 Very fast PowerMESH IGBT |
| STGP10NC60HD | 功能描述:IGBT 晶體管 PowerMESH TM IGBT RoHS:否 制造商:Fairchild Semiconductor 配置: 集電極—發(fā)射極最大電壓 VCEO:650 V 集電極—射極飽和電壓:2.3 V 柵極/發(fā)射極最大電壓:20 V 在25 C的連續(xù)集電極電流:150 A 柵極—射極漏泄電流:400 nA 功率耗散:187 W 最大工作溫度: 封裝 / 箱體:TO-247 封裝:Tube |
| STGP10NC60K | 功能描述:IGBT 晶體管 PowerMESH TM IGBT RoHS:否 制造商:Fairchild Semiconductor 配置: 集電極—發(fā)射極最大電壓 VCEO:650 V 集電極—射極飽和電壓:2.3 V 柵極/發(fā)射極最大電壓:20 V 在25 C的連續(xù)集電極電流:150 A 柵極—射極漏泄電流:400 nA 功率耗散:187 W 最大工作溫度: 封裝 / 箱體:TO-247 封裝:Tube |
發(fā)布緊急采購，3分鐘左右您將得到回復(fù)。