參數(shù)資料
型號： STGB3NB60HDT4
英文描述： Transient Surge Protection Thyristor; Package/Case:DO-214AA; Current, It av:2.2A; Leaded Process Compatible:No; Peak Reflow Compatible (260 C):No; Reel Quantity:2500; Capacitance:45pF; Current Rating:2.2A; Forward Current:5A
中文描述： N溝道3A條- 600V的IGBT的TO-220/TO-220FP/D2PAK POWERMESH
文件頁數(shù)： 2/12頁
文件大?。?/td> 585K
代理商： STGB3NB60HDT4
STGP3NB60HD - STGP3NB60HDFP - STGB3NB60HD
2/12
ABSOLUTE MAXIMUM RATINGS
Symbol
( )
Pulse width limited by safe operating area
THERMAL DATA
ELECTRICAL CHARACTERISTICS
(T
CASE
= 25 °C UNLESS OTHERWISE SPECIFIED)
OFF
Symbol
Parameter
V
BR(CES)
Collector-Emitter Breakdown
Voltage
I
CES
Collector cut-off
(V
GE
= 0)
V
CE
= Max Rating, T
C
= 125 °C
I
GES
Gate-Emitter Leakage
Current (V
CE
= 0)
ON (1)
Symbol
V
GE(th)
V
CE(sat)
(#) Calculated according to the iterative formula:
Parameter
Value
Unit
STGP3NB60HD
STGB3NB60HD
STGP3NB60HDFP
V
CES
V
GE
I
C
I
C
I
CM
( )
P
TOT
Collector-Emitter Voltage (V
GS
= 0)
600
V
Gate-Emitter Voltage
± 20
V
Collector Current (continuous) at T
C
= 25°C (#)
Collector Current (continuous) at T
C
= 100°C (#)
10
A
6
A
Collector Current (pulsed)
24
A
Total Dissipation at T
C
= 25°C
Derating Factor
50
25
W
0.4
0.2
W/°C
T
stg
T
j
Storage Temperature
–55 to 150
°C
Operating Junction Temperature
TO-220/D
2
PAK
2.5
TO-220FP
Rthj-case
Rthj-amb
Thermal Resistance Junction-case Max
Thermal Resistance Junction-ambient Max
5
°C/W
°C/W
62.5
Test Conditions
I
C
= 250 μA, V
GE
= 0
Min.
600
Typ.
Max.
Unit
V
V
CE
= Max Rating, T
C
= 25 °C
50
μA
100
μA
V
GE
= ±20V , V
CE
= 0
±100
nA
Parameter
Test Conditions
V
CE
= V
GE
, I
C
= 250μA
V
GE
= 15V, I
C
= 3 A
V
GE
= 15V, I
C
= 3 A, Tj =125°C
Min.
Typ.
Max.
Unit
Gate Threshold Voltage
3
5
V
Collector-Emitter Saturation
Voltage
2.4
2.8
V
1.9
V
I
C
T
C
(
)
T
CESAT MAX
T
C
–
THJ
C
–
)
T
C
I
C
,
(
)
×
R
=
相關(guān)PDF資料
PDF描述
STGB3NB60MD N-CHANNEL 600V 3A TO-220/D2PAK POWERMESH IGBT
STGB3NB60MDT4 Transient Surge Protection Thyristor; Package/Case:DO-214AA; Leaded Process Compatible:No; Peak Reflow Compatible (260 C):No; Reel Quantity:2500; Repetitive Reverse Voltage Max, Vrrm:6V; Capacitance:100pF; Holding Current:50mA
STGP3NB60MD N-CHANNEL 600V 3A TO-220/D2PAK POWERMESH IGBT
STGP7NB60MD N-CHANNEL 7A - 600V TO-220/D2PAK POWERMESH IGBT
STGB7NB60MDT4 N-CHANNEL 7A - 600V TO-220/D2PAK POWERMESH IGBT
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
STGB3NB60K 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:N-CHANNEL 3A - 600V - TO-220/DPAK/D2PAK PowerMESH⑩ IGBT
STGB3NB60KD 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:N-CHANNEL 3A - 600V - TO-220/DPAK/D2PAK PowerMESH⑩ IGBT
STGB3NB60KDT4 功能描述:IGBT 晶體管 N-Ch 600 Volt 6 Amp RoHS:否 制造商:Fairchild Semiconductor 配置: 集電極—發(fā)射極最大電壓 VCEO:650 V 集電極—射極飽和電壓:2.3 V 柵極/發(fā)射極最大電壓:20 V 在25 C的連續(xù)集電極電流:150 A 柵極—射極漏泄電流:400 nA 功率耗散:187 W 最大工作溫度: 封裝 / 箱體:TO-247 封裝:Tube
STGB3NB60MD 制造商:未知廠家 制造商全稱:未知廠家 功能描述:N-CHANNEL 600V 3A TO-220/D2PAK POWERMESH IGBT
STGB3NB60MDT4 功能描述:IGBT 晶體管 N-Ch 600 Volt 3 Amp RoHS:否 制造商:Fairchild Semiconductor 配置: 集電極—發(fā)射極最大電壓 VCEO:650 V 集電極—射極飽和電壓:2.3 V 柵極/發(fā)射極最大電壓:20 V 在25 C的連續(xù)集電極電流:150 A 柵極—射極漏泄電流:400 nA 功率耗散:187 W 最大工作溫度: 封裝 / 箱體:TO-247 封裝:Tube
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